Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands

Abstract

Magnetotransport of holes in Si inversion layers of 1D MOS capacitors on arbitrarily oriented substrates is simulated. The 6 × 6 k · p Schrödinger equation is solved self-consistently with the confining electrostatic potential to calculate the 2D hole gas subband structure. The transport of holes within the channel is investigated by solving the stationary Boltzmann equation (BTE) for a small lateral driving electric field. The distribution function is either expressed as a polynomial of the magnetic field or expanded into harmonics of the polar angle within 2D k-space (Fourier expansion). The Hall factor and the second order magnetotransport coefficients are calculated. The approximation of the second order coefficient by the square of the channel mobility is shown to fail.