2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) 2015
DOI: 10.1109/transducers.2015.7181158
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Simulation of microloading and ARDE in DRIE

Abstract: An atomisitic etching model is combined with a continuum concentration solver in order to realistically simulate various effects during Deep Reactive Ion Etching (DRIE or the Bosch process). This includes microloading (or loading effect) and Aspect Ratio Dependent Etching (ARDE or lag effect). The model strongly differs from the current simulation approaches in which the local etch rate depends markedly on complex visibility integrals over the ion and neutral fluxes. Instead, we focus on the description of the… Show more

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Cited by 9 publications
(7 citation statements)
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“…Moreover, unlike MEMS, usually only one particular critical dimension of the grating pattern has really a major impact on the etch rate, which is the period of the grating lines. Therefore, the conclusions from previous studies [ 17 , 22 , 23 , 24 , 25 ] are not fully representative of our application. The main reason for this is the fact that most of the DRIE applications like MEMS are targeted at achieving uniform depth for features with different sizes.…”
Section: Introductionmentioning
confidence: 71%
“…Moreover, unlike MEMS, usually only one particular critical dimension of the grating pattern has really a major impact on the etch rate, which is the period of the grating lines. Therefore, the conclusions from previous studies [ 17 , 22 , 23 , 24 , 25 ] are not fully representative of our application. The main reason for this is the fact that most of the DRIE applications like MEMS are targeted at achieving uniform depth for features with different sizes.…”
Section: Introductionmentioning
confidence: 71%
“…Firstly, the pattern depths on the Si master molds could differ due to the micro-loading and the aspect ratio dependent etching (ARDE) effects, which cause the Si etch rate to be dependent on the density and A.R. of the micro-structures, respectively [ 51 , 52 , 53 ]. Secondly, it could be that the flexible PDMS patterns are stretched during peeling from the Si mold (possibly the case for the PDMS-PIL samples) or have shrunk during curing (possibly the case for the PDMS-C-RESS samples).…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, the loading effect should be considered in this simulator [ 22 ]. Usually the aspect ratio dependent etching or RIE lag influence the depth of the trench due to its own sizes exposed to the plasma.…”
Section: Simulation and Experimental Resultsmentioning
confidence: 99%