Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses
Abstract:The gamma-ray blazar 1611+343 was observed with polarization VLBI mode at 5 GHz in February 1999. The total intensity (I) VLBI image of the source shows a core-jet structure. The jet bends eastward at ∼ 3 mas south of the core. Four components have been detected from results of fitting, with apparent speeds estimated at 6.7 ± 0.7, 2.5 ± 0.3, 4.5 ± 0.5 h −1 c for three jet components (taking H 0 = 100 h km s −1 Mpc −1 , q 0 = 0.5). The polarization (P ) VLBI image of 1611+343 displays the polarized configuratio… Show more
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