Simulation of optical excitation spectra of semiconductor nanowires within effective bond orbital model

Chang, Yia-Chung; Mahmoud, Waleed E.

doi:10.1016/j.cpc.2015.05.023

Cited by 70 publications

(6 citation statements)

References 40 publications

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“…near the band gap). The simple analytical expression [25] of the EBOM Hamiltonian for ZB structure allows for parameterization in terms of band energies at the high symmetry points. In this way, the band structures from EBOM are in good agreement with those obtained by more rigorous model throughout the entire BZ while the electron (hole) effective masses remain fairly close to experimental values.…”

Section: Effective Bond-orbital Model Reviewmentioning

confidence: 99%

“…First of all, the interaction parameters of the EBOM for ZB structure are obtained by using formulas derived in Ref. [25] with the choice of fitting the conduction band energy at X or L point (whichever is lower in energy). In order to fit the lowest conduction band energy at X and L points simultaneously, an extra interaction parameter, E sz , which describes the lack of inversion symmetry, is included in the EBOM for IIInitride semiconductors with ZB structure.…”

Section: Interaction Parameters For Wz Structures Based On Modified P...mentioning

confidence: 99%

“…In this modified EBOM formulas, when considering III-nitride semiconductors, all the equations for calculating the interaction parameters are identical with those proposed in Ref. [25] (case B), while E sz is calculated by using the following constraint…”

Section: Interaction Parameters For Wz Structures Based On Modified P...mentioning

confidence: 99%

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Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Hsiao

Liang

Chang

et al. 2020

Computer Physics Communications

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A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters for zinc-blende (ZB) structures are used as initial guess of the ones for WZ structures base on the two-center approximation. The electronic band structures of III-nitride WZ semiconductors can hence be produced by utilizing this set of parameters modified to include effects due to three-center integrals and fitting with first-principles calculations. Details of the semi-empirical fitting procedure for constructing the EBOM Hamiltonian for bulk III-nitride WZ semiconductors are presented. The electronic band structures of bulk AlN, GaN, and InN with WZ structure calculated by EBOM with modified interaction parameters are shown and compared with the results from density functional (DFT) theory with meta-generalized gradient approximation (mGGA). Electronic band structures and electron (hole) effective masses near the zone center calculated by the proposed model are analyzed and compared with the k · p model.

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Section: Effective Bond-orbital Model Reviewmentioning

confidence: 99%

Section: Interaction Parameters For Wz Structures Based On Modified P...mentioning

confidence: 99%

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Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Hsiao

Liang

Chang

et al. 2020

Computer Physics Communications

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“…This shift is suggesting the decrease of the optical band gap of the imprinted nanocomposites. The optical band gap values of the imprinted nanocomposites were calculated based on Tauc's equation , ;

α h ν = A {(h ν - E_{normalg})}^{\frac{1}{2}}

where α is the coefficient of absorption t and hν is the incident photons energy. As the InP exhibits a direct transition, one may get

{(α h ν)}^{2} = A^{2} true(h ν - E_{g} true)

…”

Section: Resultsmentioning

confidence: 99%

Section: Characteristics Of Thementioning

confidence: 99%

Synthesis and characterization of surface patterned nanoimprinted in_1–_xCr_xP/P(VDF‐TrFE) nanocomposite films for solar cell application potential

et al. 2017

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Nanoimprinted nanocomposites based on the inclusion of semiconductor quantum dots (QDs) into ferroelectric polymer matrix have shown a paramount encouragement owing to their versatile applications, such as field effect transistors, lasers, LEDs, bio‐probes, metal ion sensors, and photovoltaic devices. Here, we have developed a novel approach to fabricate nanoimprinted In1–xCrxP/P(VDF‐TrFE) nanocomposite films based on the nanoimprint lithography stamp technique for the first time. In1–xCrxP QDs have been prepared by colloidal technique at various contents of Cr ions from 1 at% to 9 at%. These QDs were doped into P(VDF‐TrFE). The prepared nanocomposite films were characterized by X‐ray diffraction, transmission electron microscopy, energy dispersive spectroscopy, Fourier transform spectroscopy, and atomic force microscopy. The thermal properties were investigated by thermogravimetric and differential scanning calorimetry. The inclusion of the In1–xCrxP QDs into the P(VDF‐TrFE) nanocomposites resulted in an enhancement of the thermal stability, an increase of the melting temperature and decrease of the Curie temperature. The nanoimprinted In0.91Cr0.09P/P(VDF‐TrFE) nanocomposite film showed high photocurrent response. The generated electromotive force, emf, in the nanoimprinted films was five times greater than the flat deposited film. Therefore, the developed surface pattern nanocomposite film based on In1–xCrxP/P(VDF‐TrFE) nanocomposite will open a new avenue for the flexible solar cell application potential. POLYM. COMPOS., 40:E136–E145, 2019. © 2017 Society of Plastics Engineers

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Structural, luminescence and optoelectronic properties of the In1−xAcxAs quantum dots prepared using mercaptoacetic acid-assisted colloidal technique for photodiode applications

Gahtany

2023

J Mater Sci: Mater Electron

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Simulation of optical excitation spectra of semiconductor nanowires within effective bond orbital model

Cited by 70 publications

References 40 publications

Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Synthesis and characterization of surface patterned nanoimprinted in_1–_xCr_xP/P(VDF‐TrFE) nanocomposite films for solar cell application potential

Structural, luminescence and optoelectronic properties of the In1−xAcxAs quantum dots prepared using mercaptoacetic acid-assisted colloidal technique for photodiode applications

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Simulation of optical excitation spectra of semiconductor nanowires within effective bond orbital model

Cited by 70 publications

References 40 publications

Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Synthesis and characterization of surface patterned nanoimprinted in1–xCrxP/P(VDF‐TrFE) nanocomposite films for solar cell application potential

Structural, luminescence and optoelectronic properties of the In1−xAcxAs quantum dots prepared using mercaptoacetic acid-assisted colloidal technique for photodiode applications

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Product

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About

Synthesis and characterization of surface patterned nanoimprinted in_1–_xCr_xP/P(VDF‐TrFE) nanocomposite films for solar cell application potential