Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer

Abstract

In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiFx), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells. Lithium fluoride holds a capacity to achieve significant power conversion efficiency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium fluoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also beneficial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiFx encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band offset to explore the consequence of work function in the LiFx as a carrier selective contact layer. We were able to achieve a maximum power conversion efficiency (PEC) of 23.74%, fill factor (FF) of 82.12%, Jsc of 38.73 mA cm−2, and Voc of 741 mV by optimizing the work function and thickness of LiFx layer.

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“…8 shows the effect of the change of the substrate doping concentration on the performance of the HACI cell, which varies from 3×10 15 cm -3 to 1×10 17 cm -3 . From the figure, we can see that the short-circuit current density of the cell decreases as the concentration of the substrate increases, and the rate of decrease becomes faster as the concentration increases, and when the doping concentration of the substrate reaches 1×10 17 cm -3 , the short-circuit current density decreases to 42.9mA/cm 2 . While the open-circuit voltage remains essentially constant at doping concentrations less than 5×10 16 cm -3 , it decreases slightly when the doping concentration is greater than 5×10 16 cm -3 , from the original 0.76 V to 0.75 V. At doping concentrations less than 6×10 16 cm -3 , the fill factor increases with the doping concentration, from 81% at the beginning to 84.99%, while when the doping value decreases slightly when the doping concentration is greater than this value.…”

“…In the past decades, heterojunction solar cells based on hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) have attracted much attention due to their high open-circuit voltage, low-cost manufacturing process and low temperature coefficient [1][2][3][4][5][6][7][8][9]. In 1992, Sanyo (later acquired by Panasonic) developed an a-Si:H/c-Si heterojunction solar cell with intrinsically thin layers (referred to as HIT solar cell).…”

Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells

“…In recent years, solar cells of high efficiency having different specialties such as rear emitter silicon heterojunction, carrier selective contact based on transition metal oxides, double-barrier quantum-well-based tunnel oxide-passivated contacts, passivated emitter and rear local contact (PERL), passivated emitter and rear contact (PERC), interdigitated back contact, and heterojunction with intrinsic thin layer have emerged, starting with monocrystalline silicon (c-Si) wafer. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] Silicon solar cells fabricated with p-type silicon wafers are still the working horse in favor of the PV industry. [24] It has an advantage over the n-type silicon solar cells due to the lower cost of silicon wafer.…”

Simulated Study and Surface Passivation of Lithium Fluoride-Based Electron Contact for High-Efficiency Silicon Heterojunction Solar Cells

“…Hole transport layers (HTLs) as a replacing material for a-Si:H (p) layer have been proposed with large bandgaps and high work function-based materials for instance nickel oxide (NiO x ), tungsten oxide (WO x ), vanadium oxide (V 2 O x ), as well as molybdenum oxide (MoO x ). Wide bandgaps with materials that have a low work function, like lithium fluoride (LiF x ), cesium iodide (CsI), titanium oxide (TiO x ), and magnesium fluoride (MgF x ), have also been suggested as electron transport layers (ETLs) [21][22][23][24][25][26][27][28][29][30][31][32][33][34] to achieve high efficiency for SHJ solar cells.…”