Simulation of state of the art EEPROM programming window closure during endurance degradation

1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation

“…For the erased state, the injection efficiency loss is very low, so the Vt shift of 1V is due to static aging. This result is in agreement with a previous work in which negative trapped charges were implemented in the tunnel oxide of an EEPROM to simulate the programming window closure during an endurance test [21]. Indeed, for an equivalent charge density in the EEPROM tunnel oxide, the injection efficiency loss by Fowler-Nordheim is also negligible.…”