Simulation of stress-strain state in SiGe island heterostructures

Goldstein, R. V.; Городцов, В. А.; Shushpannikov, P. S.

doi:10.3103/s0025654410030027

Cited by 4 publications

(3 citation statements)

References 37 publications

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“…The multiplier 2 appears due to the chessboard-like buckling mode for which As we can see the error of the approximate relations (32) is larger with growth of the relative stiffness of foundation f E and at the same time the influence of the initial stresses of a foundation becomes larger. In Table 2 , see [21]), we see that for the foundation with the larger stiffness the stability loss may not have place. At the same time according to relation (38) with growth of f E the wave length at buckling is decreased which may be desirable.…”

Section: Deformation and Fracture In Technological Processesmentioning

confidence: 94%

“…The compression stresses may be generated by the force and/or the termal deformations. Here we study the additional origin of the initial stresses, namely a thin layer of the nano-dimensional thickness which is grown on the plate [21]. If the equilibrium distances between atoms of crystal lattices of a layer and of a plate are different then the stresses appear in the layer.…”

Section: Introductionmentioning

confidence: 99%

“…The corresponding strain of non-coincidence in the case of the atom lattices of silicon Si and germanium Ge depends on the relative substance of Ge in the rigid mortar SiGe and it may be 0.04. In [21] for this system the analysis of the stressstrain state of the island-like hetero-structure is made. Below the thin layer is simulated by a membrane with initial stresses being in a full contact with the plate.…”

Section: Introductionmentioning

confidence: 99%

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Bulk and Surface Stability of Materials

Морозов

Товстик

2012

KEM

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Buckling modes of a linearly elastic compressed medium are discussed. Stability of a plate lying on a soft elastic foundation is investigated. To the plate surface a membrane with initial stresses is attached. The stresses in the membrane simulate difference of equilibrium distances between atoms of crystal lattices of a surface layer (membrane) and of a plate. Also the influence of force and thermal stresses is studied. The chessboard-like stable buckling mode appears on the membrane surface at the stability loss. The ways of control of the wave length of buckling mode are discussed.

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Section: Deformation and Fracture In Technological Processesmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Bulk and Surface Stability of Materials

Морозов

Товстик

2012

KEM

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Time-dependent nonlinear finite element modeling of the elastic and plastic deformation in SiGe heterostructured nanomaterials

Karoui

Sahtout

Vlahović

2017

Journal of Applied Physics

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The study of strain and stress distributions and relaxation mechanisms during epitaxial deposition of ultra-thin film heterostructures is of critical importance for nanoelectronic materials. It provides guidance for the control of structures at the nanometer scale and insights into the underlying physics. In this paper, we present a time-dependent nonlinear finite element model, which realistically simulates the evolution of elastic and plastic deformation in SiGe heterostructured nanomaterials during epitaxial deposition. Dynamic elements have been used to simulate the layer-by-layer deposition and growth rate as well as chemical-mechanical polishing (CMP) planarization. The thickness of add-on and etched-off layers was limited to few nanometers depending on the final epitaxial layer thickness and its growth rate. The material plastic behavior is described by the Von Mises yield criterion coupled with isotropic work hardening conditions and the Levy-Mises flow rule. The model has been successfully applied to the growth of ultra-thin (15 nm) strained-Si/Si1-xGex/Si(001) heterostructures. Depth and time dependent elastic and plastic stress and strain in the growing layers are quantified and the relaxation mechanisms are deduced. From the calculated elastic and plastic strain fields, we derived the relaxation factor, plastic strain rate, dislocation glide velocity, misfit, and threading dislocation density as well as several structural properties such as lattice parameters and misfit dislocation spacing and length. These were found in close agreement with published experimental data. The simulation was able to show at which step of the growth process and how often yielding events occur. Plastic deformation and so the nucleation and multiplication of dislocations appeared to occur consistently during growth of the graded-layer. The simulation was also able to predict that CMP of the SiGe-cap followed by a regrowth step will indeed further relax the graded layer. This two-phase relaxation mechanism is expected from the growth process but experimentally difficult to verify. Results from the simulation also show that rapid cooling is favored over slow cooling in order to retain the maximum amount of elastic strain in the strained-Si device layer.

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Buckling forms of a compressed plate on an elastic foundation

Морозов

Товстик

2012

Dokl. Phys.

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Simulation of stress-strain state in SiGe island heterostructures

Cited by 4 publications

References 37 publications

Bulk and Surface Stability of Materials

Bulk and Surface Stability of Materials

Time-dependent nonlinear finite element modeling of the elastic and plastic deformation in SiGe heterostructured nanomaterials

Buckling forms of a compressed plate on an elastic foundation

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