Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111)

Abstract

A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111). In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in which the exchanged Ge adatom re-exchange with the lifted Sb atom to return to the surfactant layer, are considered. Our simulation shows the re-exchange process plays an important role on the growth mode transition in Ge/Sb/Si(111) system. The influences of the substrate temperature and the deposition rate on the growth of Ge/Sb/Si(111) system is discussed.

Electrochemical Deposition of Antimony on Single-Crystal Gallium Nitride(0001) Electrode: Nucleation and Growth Mechanism

“…[1][2][3][4][5][6][7][8][9] Besides, the Sb layer is found to act as a surfactant during the growth of metals on intrinsic semiconductors, e.g, Si and Ge. 10,11 The surfactant effect of Sb is also observed on lateral epitaxial overgrowth of GaN. 12,13 However, it is noted that previous studies on Sb deposition are almost deposited in vacuum.…”