2012
DOI: 10.1002/pssb.201100732
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Simulation of the oxidation pathway on Si(100) using high‐resolution EELS

Abstract: We compute high-resolution electron energy loss spectra (HREELS) of possible structural motifs that form during the dynamic oxidation process on Si(100), including the important metastable precursor silanone and an adjacent-dimer bridge (ADB) structure that may seed oxide formation. Spectroscopic fingerprints of single site, silanone, and ''seed'' structures are identified and related to changes in the surface bandstructure of the clean surface. Incorporation of oxygen into the silicon lattice through adsorpti… Show more

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Cited by 3 publications
(5 citation statements)
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“…Along the line shape, single spectral transitions computed with the Sternheimer method , are shown, showing consistency between the two approaches. Noticeably, the spectral line shape is in fair agreement with the overall EELS spectrum obtained in more accurate and extensive studies. ,, …”
Section: Code Performance On Selected Benchmark Testssupporting
confidence: 84%
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“…Along the line shape, single spectral transitions computed with the Sternheimer method , are shown, showing consistency between the two approaches. Noticeably, the spectral line shape is in fair agreement with the overall EELS spectrum obtained in more accurate and extensive studies. ,, …”
Section: Code Performance On Selected Benchmark Testssupporting
confidence: 84%
“…In Figure we show the phonon dispersions of the 100 surface of silicon with c(4 × 2) reconstruction (reported among the most stable ones by a number of previous studies , ), simulated using a base centered orthorhombic primitive cell ( a = 2 b ). , The first Brillouin Zone of the slab has been sampled with a 8 × 8 × 1 uniform Monkhorst–Pack mesh (21 total symmetry inequivalent k -points), whereas two different depths have been considered in the third direction, one with 16 layers of silicon atoms (referred to as Si(100)-16L hereafter, with 64 atoms per cell) and one with 32 layers (Si(100)-32L, 128 atoms per cell).…”
Section: Code Performance On Selected Benchmark Testsmentioning
confidence: 99%
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“…71 Moreover, the resultant oxide defects accelerate the oxidation of adjacent silicon. 102 Therefore, decreasing oxygen level in the system is crucial to achieve a high packing density and low oxide defects. On the other hand, longer OEG chains generally increase protein resistance, but are expected to decrease packing density and stability of the lms.…”
Section: Introductionmentioning
confidence: 99%