Simulation of the Substrate Temperature Field for Plasma Assisted Chemical Etching

Meister, Johannes; Böhm, G.; Eichentopf, Inga-Maria; Arnold, Thomas

doi:10.1002/ppap.200930509

Cited by 22 publications

(6 citation statements)

References 12 publications

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“…Nevertheless, as previous works [22][23][24] have already stated, those degradation processes in a plasma environment are very temperature sensitive. In E-mode, even after long treatment times, sample surface remained almost unmodified.…”

Section: Resultsmentioning

confidence: 95%

Dependence of E-H transition in argon ICP discharges for treatment of organic molecules

et al. 2018

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Plasma surface cleaning is an alternative process that aims at the fully removal of organic contaminants on several kinds of materials. Despite its advantages, there are still lacks on the comprehension of the complex relations between plasma-generated species and organic molecules during plasma cleaning. In the present work, a linear alkane (hexatriacontane -C 36 H 74 ), used as a contaminant model, was exposed to an Argon radiofrequency (RF) inductively coupled plasma (ICP). The by-products from degradation were monitored by optical emission spectroscopy (OES) and residual gas analysis (RGA), to identify the influence of sample positioning on E and H discharge modes regions. The exposition to H-mode discharge resulted in more intense and profuse emissions of C-H and C 2 systems. RGA results show similar byproducts from degradation in both modes; however, the intensity from treatment in H-mode is largely greater. It was also observed that plasma etching in H-mode is enough to melt the sample, while E-type discharge leaves the surface of the sample apparently unchanged.

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Section: Resultsmentioning

confidence: 95%

Dependence of E-H transition in argon ICP discharges for treatment of organic molecules

et al. 2018

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“…Meister 33 worked with a very similar approach between simulation and experimental analysis, finding a good fit among his results. However, as in other works 8,21 , those temperature values obtained on the treatments were considerably high (thousands of K) and variations of tens of degrees between simulation and experiment are usually acceptable.…”

Section: Validation Of Simulation 1 (Visual Analysis)mentioning

confidence: 93%

Determination of Surface Temperature in ICP RF Plasma Treatments of Organic Materials

et al. 2017

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The reactions that can occur on organic materials treated in plasma enviorement are strongly affected by surface temperature, thus the sharp determination of this variable is extremely important to process control. In situ temperature measurements are often employed; however, the measured point is generally under the treated surface. If in metallic materials the high thermal conductivity minimizes this problem, in non-metallic materials processing it becomes important, because its thermal resistivity besides a high sensibility to small temperature variations. The present work uses a simulation tool to extract thermal data on Ar+O 2 RF plasma processing of Stearic Acid. Experimental data were obtained by thermocouples placed inside the samples. The extrapolation of surface temperature was performed by numerical simulation with Autodesk CFD software v.15.1. Results show that the temperature of the surface reaches values higher than the ones measured inside the sample holder. This difference of temperature is in good agreement with the visual observation of the phase transformations in the treated material, showing a simple and valuable tool to better control of plasma treatments.

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“…Meister et al 71 used reactive plasma machining for optical surface polishing. In this process, the material removal mechanism is pure chemical etching and mainly depends on the work surface temperature.…”

Section: Plasma Polishing Methods Applied To Various Optical Componentsmentioning

confidence: 99%

Plasma polishing processes applied on optical materials: A review

Yadav

Kumar

et al. 2021

Journal of Micromanufacturing

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Nowadays, the surface quality of the material is crucial for industry and science. With the development of micro-electronics and optics, the demand for surface quality has become more and more rigorous, making optical surface polishing more and more critical. Plasma polishing technology is conceived as an essential tool for removing surface and subsurface damages from traditional polishing processes. The plasma processing technology is based on plasma chemical reactions and removes atomic-level materials. Plasma polishing can easily nano-finish hard-brittle materials such as ceramics, glass, crystal, fused silica, quartz, Safire, etc. The optical substrate with micro-level and nano-level surface roughness precision is in demand with the advancement in optics fabrication. The mechanical properties of super-finished optics materials are being used to fulfill the requirement of modern optics. This article discusses the processing of different types of freeform, complex and aspheric optical materials by the plasma polishing process used mainly by the optical industry. The plasma polishing devices developed in the last decade are thoroughly reviewed for their working principles, characteristics and applications. This article also examines the impact of various process parameters such as discharge power, rate of gas flow, mixed gas flow ratio and pressure on the plasma polishing process.

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Simulation of the Substrate Temperature Field for Plasma Assisted Chemical Etching

Cited by 22 publications

References 12 publications

Dependence of E-H transition in argon ICP discharges for treatment of organic molecules

Dependence of E-H transition in argon ICP discharges for treatment of organic molecules

Determination of Surface Temperature in ICP RF Plasma Treatments of Organic Materials

Plasma polishing processes applied on optical materials: A review

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