2015
DOI: 10.3762/bjnano.6.201
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Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires

Abstract: SummaryThe present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young’s modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The… Show more

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Cited by 5 publications
(3 citation statements)
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“…However, here we study the diamond lattice structure of the carbon-group materials, partly because nanowire experiments 4,22,23,26 use such materials. We note that the diamond lattice can be conveniently considered as embedded in the 'diamond cubic' crystal structure units, as shown in Fig.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…However, here we study the diamond lattice structure of the carbon-group materials, partly because nanowire experiments 4,22,23,26 use such materials. We note that the diamond lattice can be conveniently considered as embedded in the 'diamond cubic' crystal structure units, as shown in Fig.…”
Section: Methodsmentioning
confidence: 99%
“…Despite such favorable characteristics, the thermal stability of Si-and Ge-based semiconductor nanowires and their morphological evolution under elevated temperatures have recently been of concern [21][22][23][24][25][26][27][28][29] . In general, since nanowires have small size and large area-to-volume ratio, their physical properties differ from those of bulk materials, they tend to form bulges and eventually break-up into isomeric nanoparticles at the premelting temperatures [25][26][27][28][29][30][31][32][33][34][35] . Although this effect can be favorably exploited in the design of optical waveguides [36][37] , naturally, it also impairs the optoelectrical properties of the system.…”
Section: Introductionmentioning
confidence: 99%
“…cập [34][35][36][37][38][39][40][41][42][43] . Ứng suất nhiệt và sự mất ổn định của Si/Ge NWs cũng đã được D. Suvankar và đồng nghiệp 44 khảo sát bằng phương pháp mô phỏng động lực học phân tử.…”
Section: Giới Thiệuunclassified