Simulation Parameter Extraction Using Distribution Processing and Fast SEM Profile Digitization

Park, Jun-Taek; Sohn, Dong-Soo; Oh, Hye−Keun

doi:10.3938/jkps.43.836

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Cross-sectional Critical Shape Error1

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2004

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“…Moreover, our model saves the time required to fit the profile shape because the procedures mentioned at the beginning of this section for the conventional CCSE are not necessary in our method. 7) 3. Experiment…”

Section: Cross-sectional Critical Shape Errormentioning

confidence: 99%

The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method

Kim

Park

Choi

et al. 2004

Jpn. J. Appl. Phys.

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As the minimum feature size decreases, the gap between real experimental lithography process and simulated one increases. This gap should be reduced as small as possible by inserting the correct process parameters to simulation. Unfortunately, we do not have the exact simulation parameters in most cases and we need to get more accurate parameters. Among many methods to obtain the exact parameters, we used a new automatic cross-sectional critical shape error method to get the develop parameters by comparing the experimental scanning electron microscope image with the simulated image. This new bitmap masking technique is much faster than the conventional serial cross-sectional critical shape error method.

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Section: Cross-sectional Critical Shape Errormentioning

confidence: 99%