Simulation studies on the RF gun saturated emission

Polozov, Sergey; Rashchikov, V. I.

doi:10.35470/2226-4116-2020-9-2-103-106

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2021

2024

Publication Types

Select...

Article5

Relationship

Self Cite1

Independent4

Authors

Journals

Cited by 6 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The described phenomenon was first discovered while modelling PITZ photogun at DESY [10,11]. In PITZ photogun, there is a photocathode containing a thin (up to 100 nm) layer of a cesium telluride (Cs 2 Te) and a molybdenum (Mo) substrate, on which the semiconductor has been grown.…”

Section: Introductionmentioning

confidence: 98%

Semiconductor photocathode's charge in a high gradient RF photoinjector

Vladimirov,

Polozov,

Rashchikov

2024

J. Inst.

Self Cite

View full text Add to dashboard Cite

In this paper, a model describing a semiconductor photocathode's charge dynamics under an external influence in RF photoinjector is being developed. The drift-diffusion problem for conduction electrons in semiconductor layer of a photocathode is formulated and subsequently solved. The charge of the semiconductor photocathode is derived and shortly discussed. Data obtained from the model is of qualitative consistency with that derived by Krasilnikov et al. for PITZ photogun.

show abstract

Section: Introductionmentioning

confidence: 98%