Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

Mao, Hong-kai; Wang, Ying; Wu, Xin; Su, Fang-wen

doi:10.3390/mi10120815

Cited by 4 publications

(3 citation statements)

References 25 publications

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“…We can also see that, the 12 kV proposed CTH-IGBT can represent a comparative Eoff performance compared with the 5.5 kV SiC SJ-IGBT [39]. Furthermore, the CTH-IGBT can demonstrate a significantly decrease in Eoff in comparison with the other structures [39][40][41][42] As can be seen from Fig. 6, the turn-off current of CTH-IGBT drops earlier and shows almost no current tail compared with the other two stuctures.…”

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confidence: 73%

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

Wang

Mao

et al. 2020

IEEE J. Electron Devices Soc.

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In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff). The electrical properties of the proposed and contrast structures are all simulated using the ATLAS simulation software to research the working mechanism of this improved structure. For the static performance, the specific ON-resistance (Ron,sp) and the figure of merit (FOM = VBR 2 / Ron,sp) are not influenced much as compared to the traditional structure at the same breakdown voltage (VBR) of 12 kV. However, with a prominent electron current path formed by the heterojunction region of CTH-IGBT, a very available conduction path to discharge the electrons during turn-off process is proved in this paper. The simulation results demonstrate that compared with the traditional structure, the turn-off energy loss of the CTH-IGBT is reduced by 76.4%, while the turn-off time is reduced by 85.0%. Index Terms-4H-SiC, heterojunction, Insulated Gate Bipolar Transistor (IGBT), turn-off loss, turn-off time, breakdown voltage. I. INTRODUCTION he performance of silicon-based devices is gradually approaching its limits, and it has become increasingly difficult to meet the application requirements of modern power electronic systems. The third-generation semiconductor material silicon carbide (SiC) has gradually replaced the use of silicon (Si) in power applications due to its wide band gap, high breakdown electric field, high thermal conductivity, high electron saturation drift speed and higher radiation resistance. It is widely used to make high-power devices for application in high temperature, high voltage, high frequency and radiation resistant operating environments and requirements [1-6].

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confidence: 73%

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

Wang

Mao

et al. 2020

IEEE J. Electron Devices Soc.

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“…Three papers [ 1 , 2 , 3 ] deal with RF power electronics for future 5G applications and other high-speed high-power applications. Nine of the papers, [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 ], explore various designs of wide bandgap high power devices. The remaining papers cover various applications based on wide bandgaps, such as ZnO Nanorods for High Photon Extraction Efficiency of GaN-Based Photonic Emitter [ 13 ], InGaZnO Thin-Film Transistors [ 14 ], Wide Band Gap WO 3 Thin Film [ 15 ], Silver Nanorings [ 16 , 17 ] and InGaN Laser Diode [ 18 , 19 , 20 ].…”

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confidence: 99%

“…The concept is based on the transposition of the gate channel orientation from a long horizontal one to a short vertical one. Mao et al [ 8 ] introduced a portion of the p-polySi/p-SiC heterojunction on the collector side of an IGBT to reduce the turn-off loss without sacrificing other characteristics of the device. Kim et al [ 9 ] implemented a SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance.…”

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confidence: 99%

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications

Medjdoub

2021

Micromachines

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Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT

et al. 2023

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A 13 kV class n-channel 4H–SiC trench gate insulated gate bipolar transistor (IGBT) structure is designed based on Silvaco TCAD device simulator tool. The influence of metal/SiC and SiC MOS interface trap states on the static and dynamic characteristics of SiC IGBT devices are systematically studied. It is found that the electrical properties of SiC IGBTs are insensitive to the donor or acceptor traps at the interface of metal/SiC and the donor traps at the SiC/SiO2 interface. However, the acceptor traps at the SiC/SiO2 interface affect the electrical properties of SiC IGBTs greatly. When the acceptor trap density at the SiC/SiO2 interface (Dita) is up to the level of 1012 cm−2·eV−1, the turn-on voltage drop (VCEON) is increased gradually with the augmentation of Dita. The breakdown voltage (VBR) of the device is increased slightly. Further study of the device’s turn-off characteristics shows that the turn-off loss (EOFF) is decreased with the increase in Dita but a large tail current is formed. The mechanism may be that when the electrons are injected from the N+ source region into the N− drift region, the SiC/SiO2 interfacial acceptor traps at the side wall of trench gate capture a large number of electrons. As a result, the minority carrier concentration is decreased, and the conductance modulation effect on the N− drift region is weakened.

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Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss

Cited by 4 publications

References 25 publications

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications

Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT

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