Simulation Study of 4H-SiC UMOSFET Structure With p<sup>+</sup>-polySi/SiC Shielded Region

Wang, Ying; Ma, Ya-chao; Hao, Yue; Hu, Yue; Wang, Gaofeng; Cao, Fei

doi:10.1109/ted.2017.2723502

Cited by 36 publications

(14 citation statements)

References 24 publications

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“…3(b). With the concentration of CSL increasing, the higher electron concentration increases the current path between the source to the drain, effectively reducing the JEFT effect, decreasing Ron,sp [29]. But at the same time, Eox is almost linear variation.…”

Section: A Effect Of Key Structure Parameters Of Hjd-sg-mosmentioning

confidence: 97%

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Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Wang

Bao

et al. 2022

IEEE J. Electron Devices Soc.

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A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss. And the gate oxide layer has been well protected by the p-type region, which reduces the electric field in gate oxide layer at the off-state. The on-resistance of device can be greatly reduced by increasing the doping concentration of current spreading layer and will not cause a huge electric field in gate oxide layer. The specific on-resistance is decreased by about 27.8% and the static characteristic (BV 2 /Ron,sp) of the device is improved about 37.3%. SiC material has a high third quadrant turn-on voltage due to its wide band gap characteristics. The use of heterojunction integration can take place of parasitic body diode and reduce its turn-on voltage, avoid the bipolar degradation effect, and improves the reverse recovery characteristics. To evaluate the dynamic performance, the reverse transmission capacitance (Crss) and gate-drain charge (Qgd) of the proposed structure have been studied in this paper via numerical simulations. Based on the simulation, the HF-FOM (Crss×Ron,sp) and HF-FOM 2 (Qgd×R on,sp) of the proposed structure are decreased by about 87% and 86%, respectively. Meanwhile, the reverse turn-on voltage and reverse recovery characteristics are also improved, and the total energy loss decreases by about 37.3%.

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Section: A Effect Of Key Structure Parameters Of Hjd-sg-mosmentioning

confidence: 97%

“…Fig. 9 illustrates the reverse recovery characteristics of the two structures, the test circuit diagram is inserted into it [29]. The HJD-SG-MOS has effectively improved recovery characteristics.…”

Section: B Comparison Between Two Structuresmentioning

confidence: 99%

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Wang

Bao

et al. 2022

IEEE J. Electron Devices Soc.

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“…Nevertheless, a large reverse leakage current can occur due to the image charge of the metal-semiconductor junction and contamination by the metal for the Schottky contact [14]. Recently, studies on embedded heterojunction body diode MOSFETs have been conducted, but high leakage current and low critical electric field of polysilicon make it difficult to operate at high voltage [15,16].…”

Section: Introductionmentioning

confidence: 99%

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Cheon

Kim

2021

Materials

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In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

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“…Therefore, the body diode of a SiC MOSFET increases the peak current and reverse recovery charge during switching turn-on transients, which increases the reverse recovery power dissipation [10]. In order to improve the reverse recovery characteristics, several device structures in which the heterojunction diode-(composed of polysilicon and N-SiC) or Schottky barrier diode (SBD)-embedded SiC MOSFETs have been studied [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

Yoon

Kim

2021

Energies

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A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation. Due to the heterojunction diode (HJD) located at the mesa region, the reverse recovery time and reverse recovery charge of the IHP-MOSFET decreased by 62.5% and 85.7%, respectively. In addition, a high breakdown voltage (BV) and low maximum oxide electric field (EMOX) could be achieved in the IHP-MOSFET by introducing a p-shield region (PSR) that effectively disperses the electric field in the off-state. The proposed device also exhibited 3.9 times lower gate-to-drain capacitance (CGD) than the C-MOSFET due to the split-gate structure and grounded PSR. As a result, the IHP-MOSFET had electrically excellent static and dynamic characteristics, and the Baliga’s figure of merit (BFOM) and high frequency figure of merit (HFFOM) were increased by 37.1% and 72.3%, respectively. Finally, the switching energy loss was decreased by 59.5% compared to the C-MOSFET.

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Simulation Study of 4H-SiC UMOSFET Structure With p⁺-polySi/SiC Shielded Region

Cited by 36 publications

References 24 publications

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

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Simulation Study of 4H-SiC UMOSFET Structure With p+-polySi/SiC Shielded Region

Cited by 36 publications

References 24 publications

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

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Simulation Study of 4H-SiC UMOSFET Structure With p⁺-polySi/SiC Shielded Region