Simulation Study of A 1200V 4H-SiC Lateral MOSFET With Reduced Saturation Current

A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance

“…Figure 8 presents a comprehensive view of the trade-off relationship between BV and R on,sp of the devices in this article and other reported works [20][21][22][23][24][25][26][27]. As can be seen from the comparison of results in the figure, it is easy to find that the trade-off relationship between R on,sp and BV of the proposed LDMOS device is better than that of the traditional device and those in the reported works, which indicates that the proposed device has better performance.…”

“…Compared with the silicon-based power integrated circuits, SiC power integrated circuits can provide much higher power ratings and operate in much higher temperature applications due to their material properties [17][18][19]. It is worth mentioning that SiC lateral double-diffused metal oxide semiconductor (LDMOS) FETs are extremely important and commonly used in SiC power integrated circuits because they have excellent electrical properties and are adapted for integration with low-voltage devices [20][21][22][23]. In recent years, a lot of research has been conducted on SiC LDMOS devices, and SiC LDMOS power transistors with reduced surface field (RESURF) and field-plate (FP) technologies have been developed to optimize the trade-off relationship between the breakdown voltage (BV) and the specific on-state resistance [5,21,[24][25][26][27][28].…”

A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique

“…Fig. 1 (a) and (b) show the device structures of the conventional 4H-SiC LDMOS device [5] and the proposed 4H-SiC LDMOS device, respectively. In the conventional device, both source and drain field-plates are employed to optimize the surface electric field of the drift region, while in the proposed structure, two trench gates with both aspect ratios of 3 [22] are introduced and a p-top region with a three-stage doping is also employed in the drift region.…”

“…ilicon carbide (SiC) power metal-oxide-semiconductor field-effect transistor (MOSFET) has attracted increasing attention and has been considered to be a great promising power switching device owing to its high switching speed and low power-loss because of the unipolar current transport mechanism and excellent electrical properties of the SiC material, such as high current density and high breakdown electric field [1]- [5]. Vertical SiC power MOSFETs have been commercialized and gradually replaced traditional silicon-based power devices significantly outperforming the theoretical limit of silicon-based unipolar devices [6].…”

“…In SiC power ICs, the lateral SiC power MOSFET is a crucial component, because it is easy to be integrated with the low voltage CMOS devices and other devices [11]- [13]. Recently, the SiC lateral MOSFETs with reduced surface field (RESURF) structure and field-plate structure have been proposed to improve the breakdown voltages and/or reduce the on-state resistances [5], [10], [13]- [17]. However, there is still a severe trade-off relationship between the specific on-resistance (Ron,sp) and the breakdown voltage (BV) in SiC lateral MOSFET.…”