Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology

Vignetti, Matteo; Calmon, Françis; Lesieur, P.; Savoy-Navarro, A.

doi:10.1016/j.sse.2016.10.014

Cited by 11 publications

(3 citation statements)

References 13 publications

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“…Our group chose the SiPM as the sensor. Although Charbon et al and Vignetti et al [7,8] reported similar approaches called the SOI-SPAD and the 3D-SPAD, respectively, our group was the first to report on the SOI-SiPM. Figure 1 shows the cross-sectional view of the SOI-SiPM.…”

Section: Integration By Soimentioning

confidence: 74%

Development of circuit integrated monolithic SOI-SiPM for radiation detection

Kim¹,

Koyama²,

Shimazoe³

et al. 2020

J. Inst.

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Section: Integration By Soimentioning

confidence: 74%

Development of circuit integrated monolithic SOI-SiPM for radiation detection

Kim¹,

Koyama²,

Shimazoe³

et al. 2020

J. Inst.

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“…Carriers that eventually start the avalanche can be produced by thermal generation, bandto-band (B2B) tunneling or migration into the multiplication zone from the neutral zones [8]. The DCR estimation can be carried out by integrating the product of the generation rate within the space charge region (SCR) by the avalanche triggering probability (ATP), noted as P p [9][10][11]. P p calculation is also needed to estimate the photon detection probability (PDP) and efficiency of the device [12].…”

Section: Introductionmentioning

confidence: 99%

An analytical solution for McIntyre’s model of avalanche triggering probability for SPAD compact modeling and performance exploration

Albuquerque

Issartel

Gao

et al. 2021

Semicond. Sci. Technol.

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Single photon avalanche diodes (SPADs) are widely used to monitor fast and weak optical signals. The modeling of two main figures of merit of SPAD, namely the dark count rate (DCR) and the photon detection probability, requires one to calculate the avalanche triggering probability (ATP), usually obtained by numerically solving two transcendental equations (the McIntyre model) as post processing of technology computer-aided design simulations. This paper proposes an analytical alternative to this approach, exploiting an approximation of the impact ionization rates, in principle valid only under high field conditions, but extended to all fields by a simple fitting procedure. The proposed approximated/analytical ATP calculation can be efficient and relevant for SPAD compact modeling that is compatible with a spice-like simulator. As an illustration, a full analytical calculation for DCR based on both ATP and generation terms for a P+N abrupt diode junction is presented.

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“…For more demanding applications, 3D SPADs offer higher fill factor and photon detection efficiency but require a 3D-stacked chip process [2]. In this context, an original approach for a native 3D pixel has been proposed with the integration of SPAD in CMOS UTBB (Ultra-Thin Body and Box) FDSOI (Fully Depleted Silicon-On-Insulator) technology [3][4]. Preliminary results demonstrated the correct operation of the diode in Geiger mode, nevertheless a low breakdown voltage 𝑉 𝐵𝐷 associated with band-to-band and field-enhanced trap assisted tunneling effects limited the operating range to low excess voltage [4].…”

Section: Introductionmentioning

confidence: 99%

Body-biasing considerations with SPAD FDSOI: advantages and drawbacks

Albuquerque¹,

Issartel²,

Clerc³

et al. 2019

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)

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This article focusses on Single Photon Avalanche Diodes (SPAD) integrated in CMOS UTBB FDSOI (Ultra-ThinBody and Box Fully Depleted Silicon-On-Insulator technology), as an original approach for natively 3D SPAD pixels. In parallel to the optimization of the SPAD performances, we discuss in this paper some design issues relative to body-biasing effects. The associated electronics placed on top of the SPAD is constrained: the well layer below the box must be a P-type then only regular threshold voltage NMOS and low threshold voltage PMOS transistors can be used. The SPAD avalanche events will affect the electronics through body-biasing effects that can be advantageously exploited for an indirect sensing of the SPAD activity. Then two simple indirect sensing cells are studied. Firstly, a voltage divider realized with two transistors in series (PFET and NFET operating as active resistances) is simulated and measured to demonstrate its ability to detect avalanches. Secondly, an even simpler cell is studied, as it consists of only one NMOS transistor configured as an equivalent capacitive bridge (gate and box capacitances). Finally, the advantages and disadvantages from a design point of view are addressed.

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Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology

Cited by 11 publications

References 13 publications

Development of circuit integrated monolithic SOI-SiPM for radiation detection

Development of circuit integrated monolithic SOI-SiPM for radiation detection

An analytical solution for McIntyre’s model of avalanche triggering probability for SPAD compact modeling and performance exploration

Body-biasing considerations with SPAD FDSOI: advantages and drawbacks

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