Simulation study of back surface and electron transport layers on Sb2Se3 solar Cell

Abstract

In this paper a simulation study was conducted to improve the properties of the cell with a glass / ITO / CdS / Sb2Se3 / Au) using SCAPS-1D program and practically manufactured.To find out the credibility of the program, a simulation of the practical model was performed and we found that there is a very large match between the practical and theoretical results.Initially a back surface layer (BSL) was added to the base cell (CuO, CuI, CuSCN, PEDOT: PSS, MOSe2) and it was found that the best layer that gave good results is (CuO),where Conversion efficiency value (16.02%). Then buffer layers (CdS) was replaced by other Electron transport layer (ZnO, ZnO: Al, TiO2, V2O5, CdO). It was found that the best layer gave good results is (V2O5), where the conversion efficiency was increased from (4.78%) to (15.06%) for the enhanced cell. The other step was the selection of the best back surface layer with the best buffer layer, and thus the conversion efficiency was increased to (19.48%) for the composition cell (glass / ITO / V2O5 / Sb2Se3 / CuO / Au). Then a second buffer layer was added and the effect of the solar cell output was studied.