2020
DOI: 10.1088/1674-1056/ab99b5
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Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance*

Abstract: Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation … Show more

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“…This stands out because TFETs use a fundamentally distinct current injection process called band-to-band tunnelling (BTBT), which gives rise to protection from random dopant variations. [12][13][14] This tunnelling mechanism is preferred over diffusion as the barriers are thin enough over a large area for effective tunneling and provide a sufficient density of states on both the transmission and receiving sites to provide energetic locations for carriers. According to reports, FET-based biosensors are broadly applicable to the healthcare sector, pollution monitoring and biological pathogen management.…”
Section: Introductionmentioning
confidence: 99%
“…This stands out because TFETs use a fundamentally distinct current injection process called band-to-band tunnelling (BTBT), which gives rise to protection from random dopant variations. [12][13][14] This tunnelling mechanism is preferred over diffusion as the barriers are thin enough over a large area for effective tunneling and provide a sufficient density of states on both the transmission and receiving sites to provide energetic locations for carriers. According to reports, FET-based biosensors are broadly applicable to the healthcare sector, pollution monitoring and biological pathogen management.…”
Section: Introductionmentioning
confidence: 99%