Simulation study of high power microwave damage effect on GaAs HEMT

Xue, Peiwen; Fang, Jinyong; Li, Zhipeng; Sun, Jun

doi:10.1109/isape.2016.7834061

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…The thickness and doping of the intrinsic layer of the PIN diode will affect the transport and recombination characteristics of carriers within the intrinsic layer under high-frequency and high-power conditions. This will alter the resistance change properties of the PIN diode under HPM irradiation, further affecting the limiting performance parameters of the PIN diode [14]. Researchers often study the effect of these factors on limiter operation characteristics through physical modeling.…”

Section: Physical Modeling and Dataset Acquisitionmentioning

confidence: 99%

A study on the high power microwave effects of PIN diode limiter based on deep learning algorithm

Chen,

Gao,

Zhao

et al. 2024

Nanotechnology

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PIN diodes, due to their simple structure and variable resistance characteristics under high-frequency high-power excitation, are often used in radar front-end as limiters to filter High Power Microwaves (HPM) to prevent its power from entering the internal circuit and causing damage. This paper carries out theoretical derivation and research on the high power microwave (HPM) effects of PIN diodes, and then uses an optimized neural network algorithm to replace traditional physical modeling to calculate and predict two types of HPM limiting indicators of PIN diode limiters. We proposes a neural network model for each of the following two prediction scenarios: In the scenario of time-junction temperature curves under different HPM irradiation, the weighted mean squared error (MSE) between the predicted values from the test dataset and the simulated values is below 0.004. While in predicting PIN limiter's power limitation threshold, insertion loss, and maximum isolation under different HPM irradiation, the MSE of the test set prediction values and simulation values are all less than 0.03. The method proposed in this research, which applies an optimized neural network algorithm to replace traditional physical modeling algorithms for studying the high-power microwave effects of PIN diode limiters, significantly improves the computational and simulation speed, reduces the calculation cost, and provides a new method for studying the high-power microwave effects of PIN diode limiters.

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Section: Physical Modeling and Dataset Acquisitionmentioning

confidence: 99%

A study on the high power microwave effects of PIN diode limiter based on deep learning algorithm

Chen,

Gao,

Zhao

et al. 2024

Nanotechnology

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show abstract

“…Much attention has been paid to achieving better performance of high-electron-mobility transistor (HEMT) devices [12]- [17]. Regarding the associated HPM reliability, previous studies, including experimental findings and theoretical explanations, focus primarily on the thermal damage [18]- [23]. When the HEMT is exposed to HPM radiation, the device output is disturbed nonlinearly before burnout [24].…”

Section: Introductionmentioning

confidence: 99%

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation

Liu

Chai

et al. 2020

IEEE J. Electron Devices Soc.

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With the development of microelectronic technology, the reliability of devices in a complex electromagnetic environment has become one of the greatest challenges in the semiconductor industry. On this basis, a phenomenon of nonlinear transient response is observed in high-power microwave (HPM)-radiating AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (pHEMTs). This abnormal response is induced before the thermal failure, causing disturbances to the circuit. To understand this phenomenon, a detailed mechanism analysis is proposed. The analysis shows that the nonlinear response is initially associated with the 2DEG velocity saturation, then a breakdown process is induced by the tunneling and impact ionization combined effect. Within each radiation period, the channel current changes its direction twice under the influence of the HPM field. The nonlinear response current I d is derived from the theoretical analysis. TCAD simulations demonstrate the saturation and breakdown process. Corresponding experiments are performed using a Ka-band low-noise amplifier (LNA) chip. The results support the theory well.

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Investigation on the Degradation Mechanism of A1GaN/GaN HEMTs Under the Effect of Microwave Pulses at Different Powers

Yang,

Liao,

Zeng

et al. 2023

2023 Global Reliability and Prognostics and Health Management Conference (PHM-Hangzhou)

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Simulation study of high power microwave damage effect on GaAs HEMT

Cited by 4 publications

References 5 publications

A study on the high power microwave effects of PIN diode limiter based on deep learning algorithm

A study on the high power microwave effects of PIN diode limiter based on deep learning algorithm

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation

Investigation on the Degradation Mechanism of A1GaN/GaN HEMTs Under the Effect of Microwave Pulses at Different Powers

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