Simulation study of high voltage GaN MISFETs with embedded PN junction*

Fei, Xin-Xing; Wang, Ying; Luo, Xiaorong; Yu, Cheng-Hao

doi:10.1088/1674-1056/ab90f7

Cited by 2 publications

(1 citation statement)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At this time, the gliding arc is in the B-GII mode, and the voltage and current waveforms are shown in figure 12(c). The B-GII mode has the characteristics of alternating positive and negative breakdown in the B-G mode and includes the macroscopic sliding period characteristics of the A-G mode [43]. In the B-GII mode, the gliding arc current is small, and the voltage waveform in the range of 0.65-0.85 ms has a sharp rise and fall.…”

Section: Transition Mode (B-gii)mentioning

confidence: 99%

Discharge and jet characteristics of gliding arc plasma igniter driven by pressure difference

Cheng¹,

Song²,

Huang³

et al. 2022

Plasma Sci. Technol.

View full text Add to dashboard Cite

Stable combustion in an afterburner can help increase the thrust of the engine in a short time, thereby improving the maneuverability of a fighter. To improve the ignition performance of an afterburner, a twin-duct ignition platform was designed to study the performance of a gliding arc plasma igniter in a close-to-real afterburner condition. The research is carried out by a combination of experiments and simulations. The working environment of the igniter was explored through a numerical simulation. The results showed that the airflows ejected from the radiating holes formed a swirling sheath, which increased the anti-interference ability of the airflows jet. The influence of the pressure difference between the inlet and outlet of the igniter (∆p), the flow rate outside the igniter outlet (W2), and the installation angle (α) on the single-cycle discharge energy (E) as well as the maximum arc length (L) was studied through experiments. Three stages are identified: the airflows breakdown stage, the arc evolution stage, and the arc fracture stage. E and L increase by 107.3% and 366.2%, respectively, with ∆p increasing from 10 to 70 Torr. The relationship between L and ∆p obtained by data fitting is L=3-2.47/(1+(∆p/25)4). The relationship of L at different α is Lα=0°> (Lα=45° and Lα=135°) > Lα=180°> Lα=90°. E and L decreased by 18.2% and 37.3%, respectively, when ∆p=45 Torr and W2 is increased from 0 to 250 SLM.

show abstract

Section: Transition Mode (B-gii)mentioning

confidence: 99%

Discharge and jet characteristics of gliding arc plasma igniter driven by pressure difference

Cheng¹,

Song²,

Huang³

et al. 2022

Plasma Sci. Technol.

View full text Add to dashboard Cite

show abstract

Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate

Elwaradi

Mehta

Ngo

et al. 2023

Journal of Applied Physics

View full text Add to dashboard Cite

In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and electrical properties of the heterostructures have been studied. The material analysis involved high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. In a first series of HEMT structures grown with an aluminum content of 30% in the AlGaN barrier, the channel downscaling results in a reduction in the GaN strain relaxation rate but at the expense of degradation in the mean crystal quality and in the electron mobility with a noticeable increase in the sheet resistance. An opposite trend is noticed for the three-terminal breakdown voltage of transistors, so that a trade-off is obtained for a 50 nm width GaN channel HEMT, which exhibits a sheet resistance of 1700 Ω/sq. with transistors demonstrating three-terminal breakdown voltage up to 1400 V for 40 μm gate to drain spacing with static on resistance Ron = 32 mΩ cm2. On the other hand, a second series of HEMT structures with high aluminum content AlGaN barriers and sub-10 nm GaN channels have been grown perfectly strained with high sheet carrier densities allowing to preserve sheet resistances in the range of 880–1050 Ω/sq.

show abstract

Simulation study of high voltage GaN MISFETs with embedded PN junction*

Cited by 2 publications

References 40 publications

Discharge and jet characteristics of gliding arc plasma igniter driven by pressure difference

Discharge and jet characteristics of gliding arc plasma igniter driven by pressure difference

Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate

Contact Info

Product

Resources

About