Simulations of Si and SiO2 etching in SF6+O2 plasma

Knizikevičius, R.

doi:10.1016/j.vacuum.2008.11.002

Cited by 18 publications

(15 citation statements)

References 17 publications

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“…This result is similar to that in Ref. [26]. From the results, we determined the proper conditions as follows: gas ratio, O 2 ¼ 33%; pressure, 90 mTorr; power, 100 W; process time, 5 min.…”

Section: Resultssupporting

confidence: 84%

“…Many studies have reported on the RIE parameters for controlling the etching rate with the O 2 /SF 6 gas ratio [26,27]. For example, Knizikevi cius showed the influence of adding O 2 to SF 6 plasma on the etching rate of Si [26].…”

Section: Resultsmentioning

confidence: 99%

“…For example, Knizikevi cius showed the influence of adding O 2 to SF 6 plasma on the etching rate of Si [26]. This experiment showed that~30% of the gas ratio had a maximum etch rate.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Effects on micropyramid and nanoneedle structures for superhydrophobicity on Si surface

Lee

Pyo²,

Cho

et al. 2016

Vacuum

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Section: Resultssupporting

confidence: 84%

Section: Resultsmentioning

confidence: 99%

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Effects on micropyramid and nanoneedle structures for superhydrophobicity on Si surface

Lee

Pyo²,

Cho

et al. 2016

Vacuum

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“…It can be seen that it reaches a maximum value (1450 nm/min) at 5% of O 2 in the mixture. To have an idea about the correlation of the etching rate behavior with the etchant atomic fluorine concentration, we performed measurements of both atomic fluorine [F] and atomic oxygen concentrations [O] in our SF 6 /O 2 plasma discharge using the actinometry optical emission spectroscopy as described in details previously, in 7 16 performed a simulation of Si etching in SF 6 /O 2 plasma and found that at 27% O 2 , the concentration of F atoms approaches the maximum value. From the two figures 1 and 2, one can conclude that, in our case, the decrease of the etching rate beyond 5% O 2 is not related to the decrease of F radicals concentration in the plasma.…”

Section: Etching Ratementioning

confidence: 99%

Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching: Morphological, Optical and Sensing Properties

et al. 2018

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Silicon (Si) nanostructures were prepared in the downstream of radiofrequency SF 6 /O 2 mixture plasma generated in 13.56 MHz hollow cathode discharge system. Depending on the oxygen percentage in the mixture, the obtained Si nanostructures were characterized for their different properties: etching rate, morphology, optical reflectance, photoluminescence, spectral response and humidity sensing. It is found that the etching rate exhibits a maximum value when the O 2 ratio reaches 5%. An interesting defect-induced "violet" luminescence is reported from the Si nanostructures, whose intensity depends on their density. The obtained Si nanostructures have shown to induce a spectral response (SR) enhancement, in comparison with a smooth Si substrate, of about 100 times at 1100 nm wavelength. A very short response time (1 sec) to the humidity was measured for 5% O 2 in the SF 6 /O 2 plasma mixture, which was found to be well-correlated with the porosity of the Si nanostructures.

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“…The experiments are usually done in order to obtain the breakdown value of voltage under different type of voltage and electrode geometry [10][11][12][13][14][15]. In numerical modelling, simulation models are built and solved to acquire some microscopic parameters of discharge and study the principles of the discharge [16][17][18][19]. Some phenomena in gas discharges can be explained by experiments but the details of the discharge happening and developing cannot be studied well by this method.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Studies of the Electrical Discharge Characteristics of Sulfur Hexafluoride

Radmilović-Radjenović¹,

Radjenović²

2017

Journal of Electrical Engineering and Technology

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-This paper contains results of the theoretical studies of the electrical breakdown properties in sulfur hexafluoride. Since the strong interaction of high-energy electrons with the polyatomic sulfur hexafluoride molecule causes their rapid deceleration to the lower energy of electron capture and dissociative attachment, the breakdown is only possible at relatively high field strengths. From the breakdown voltage curves, the effective yields that characterize secondary electron productions have been estimated. Values of the effective yields are found to be more consistent if they are derived from the experimentally determined values of the ionization coefficient and the breakdown voltages. In addition, simulations were performed using an one-dimensional Particle-in-cell/Monte Carlo collision code. The obtained simulation results agree well with the available experimental data with an error margin of less than 10% over a wide range of pressures and the gap sizes. The differences between measurements and calculations can be attributed to the differences between simulation and experimental conditions. Simulation results are also compared with the theoretical predictions obtained by using expression that describes linear dependence of the breakdown voltage in sulfur hexafluoride on the pressure and the gap size product.

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Simulations of Si and SiO2 etching in SF6+O2 plasma

Cited by 18 publications

References 17 publications

Effects on micropyramid and nanoneedle structures for superhydrophobicity on Si surface

Effects on micropyramid and nanoneedle structures for superhydrophobicity on Si surface

Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching: Morphological, Optical and Sensing Properties

Theoretical Studies of the Electrical Discharge Characteristics of Sulfur Hexafluoride

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