Simultaneous detection of ultraviolet and infrared radiation in a single GaN/GaAlN heterojunction

Abstract

Results are presented for a dual-band detector that simultaneously detects UV radiation in the 250-360 nm and IR radiation in the 5-14 microm regions with near zero spectral cross talk. In this detector having separate UV- and IR-active regions with three contacts (one common contact for both regions) allows the separation of the UV and IR generated photocurrent components, identifying the relative strength of each component. This will be an important development in UV-IR dual-band applications such as fire-flame detection, solar astronomy, and military sensing, eliminating the difficulties of employing several individual detectors with separate electronics-cooling mechanisms.

A New Proposal for Simultaneous Multicolor Detection Based on Quantum Dots and Selective Energy Contacts

“…The proposed structure has the capability to detect multiwavelengths even IR radiations. Research designs in some works use detectors that have active regions consisting of two or more materials for multiwavelengths detection [22]. Separated active regions are required for each radiation in this work.…”

Terahertz Detection Devices

“…The GaAs was replaced by GaN and the AlGaAs replaced by AlGaN. While the initial detector using only two contacts required separate modulations to distinguish the UV from the IR, a later design using three contacts and separate active regions for the UV and the IR were able to distinguish UV from IR without separate modulations (Jayasinghe et al, 2008). This approach allows tremendous variations in the thresholds.…”

Homo- and Heterojunction Interfacial Workfunction Internal Photo-Emission Detectors from UV to IR

“…5.20, in which a theoretical response is calculated for comparison using a model developed by Matsik and Perera (2008). Although the initial detector using only two contacts required separate modulations to distinguish the UV from the IR, a later design using three contacts and separate active regions for the UV and the IR were able to distinguish UV from IR without separate modulations (Jayasinghe et al, 2008). The GaAs was replaced by GaN and the AlGaAs replaced by AlGaN.…”

“…A three-contact design modification for the UV-IR dual-band detector (one common contact for both regions) allowed separate and simultaneous identification of UV (250-360 nm) and IR (5-14 µm) radiation (Jayasinghe et al, 2008). The structure consists of an n + -GaN top-contact (TC) layer, an undoped Ga 0.974 Al 0.026 N layer acting as the UV-active region, an n + -GaN middle-contact (MC) layer, the IR-active region, and a bottom-contact (BC) layer.…”