“…These two pathways differ from one another in view of the size of system-noise interaction, and thus we can expect different outcomes for applied additive noise and multiplicative noise in comparison with the noise-free ambience. The study explores the SQP profiles against the variation of a few relevant physical quantities such as electric field (F), magnetic field (B), confinement potential (ω 0 ), dopant location (r 0 ), dopant potential (V 0 ), BE, aluminium concentration (y) (considering doped Al y Ga 1Ày As QDs), [9] noise strength (ζ), position-dependent effective mass (PDEM), [52][53][54][55][56][57][58][59][60] position-dependent dielectric screening function (PDDSF), [52,54,61,62] geometrical anisotropy, [63][64][65][66] hydrostatic pressure (HP), [13,16,17,31,32,35,37,67,68] and temperature (T). [17,31,67,68] The findings of the study highlight the role of noise in designing the SQP profiles of doped QDs when different physical quantities undergo gradual change.…”