Simultaneous enhancement in thermoelectric performance and mechanical stability of p-type SiGe alloy doped with Boron prepared by mechanical alloying and spark plasma sintering

Murugasami, R.; Vivekanandhan, P.; Kumaran, S.; Kumar, Rajesh; Tharakan, T. John

doi:10.1016/j.jallcom.2018.09.029

Cited by 36 publications

(19 citation statements)

References 28 publications

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“…The top value of ZT = 0.628 was obtained at the maximal measurement temperature of 490 • C for Si 0.65 Ge 0.35 with 0.9 at.% of Sb impurity. This value is comparable with the best known phosphorous doped Si 0.8 Ge 0.2 analogs [2,6,10]. As is known, Si-Ge alloys have a unique advantage in using waste heat at a high temperature of ∼ 800 -900 • C. On the other hand, the largest share of waste heat sources is in the range of 300 -500 • C. Therefore, the operating temperature of approximately 500 • C is also of great interest for practical application.…”

Section: Resultssupporting

confidence: 86%

See 1 more Smart Citation

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Дорохин¹,

Demina²,

Kuznetsov³

et al. 2020

Nanosystems: Phys. Chem. Math.

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Section: Resultssupporting

confidence: 86%

“…The top value obtained was as high as ZT = 0.63 at 490 • C which is comparable with values characteristic for a "classical" phosphorous or boron doped Ge-Si material [2,6,10].…”

Section: Introductionsupporting

confidence: 76%

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Дорохин¹,

Demina²,

Kuznetsov³

et al. 2020

Nanosystems: Phys. Chem. Math.

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“…The top value of ZT = 0.628 was obtained at the maximal measurement temperature of 490 C for Si0.65Ge0.35 with 0.9 at.% of Sb impurity. This value is comparable with the best known phosphorous doped Si0.8Ge0.2 analogues [2,6,9]. In conclusion, it was demonstrated for the first time that antimony doping, similarly to phosphorus doping, can be used to obtain the n-type Si1-xGex thermoelectric solid solutions.…”

Section: Resultssupporting

confidence: 77%

“…In this paper the variation of Sb concentration as well as of the sintering modes has been carried out in order to obtain the increased ZT values. The top value obtained was as high as ZT=0.628 at 490 °С which is comparable with values characteristic for a "classical" phosphorous or boron doped Ge-Si material [2,6,9].…”

Section: Introductionsupporting

confidence: 77%

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Дорохин¹,

Demina²,

Erofeeva³

et al. 2020

Preprint

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Thermoelectric Si 0,65 Ge 0,35 Sb δ materials have been fabricated by spark plasma sintering of Ge-Si-Sb powder mixture. The electronic properties of Si 0,65 Ge 0,35 Sb δ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.628 at the temperature of 490 °С, the latter value is comparable with world-known analogues obtained for Si 1- x Ge x P δ .

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“…High performance SiGe alloys depicting (A) its reduced κ t and (B) enhanced ZT via miscellaneous optimization techniques at different temperature range …”

Section: High Performance Inorganic Te Materialsmentioning

confidence: 99%

Inorganic thermoelectric materials: A review

et al. 2020

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Summary Thermoelectric generator, which converts heat into electrical energy, has great potential to power portable devices. Nevertheless, the efficiency of a thermoelectric generator suffers due to inefficient thermoelectric material performance. In the last two decades, the performance of inorganic thermoelectric materials has been significantly advanced through rigorous efforts and novel techniques. In this review, major issues and recent advancements that are associated with the efficiency of inorganic thermoelectric materials are encapsulated. In addition, miscellaneous optimization strategies, such as band engineering, energy filtering, modulation doping, and low dimensional materials to improve the performance of inorganic thermoelectric materials are reported. The methodological reviews and analyses showed that all these techniques have significantly enhanced the Seebeck coefficient, electrical conductivity, and reduced the thermal conductivity, consequently, improved ZT value to 2.42, 2.6, and 1.85 for near‐room, medium, and high temperature inorganic thermoelectric material, respectively. Moreover, this review also focuses on the performance of silicon nanowires and their common fabrication techniques, which have the potential for thermoelectric power generation. Finally, the key outcomes along with future directions from this review are discussed at the end of this article.

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Simultaneous enhancement in thermoelectric performance and mechanical stability of p-type SiGe alloy doped with Boron prepared by mechanical alloying and spark plasma sintering

Cited by 36 publications

References 28 publications

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Inorganic thermoelectric materials: A review

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