2018
DOI: 10.1016/j.solmat.2018.03.014
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Simultaneous enhancement of short-circuit current density, open circuit voltage and fill factor in ternary organic solar cells based on PTB7-Th:IT-M:PC71BM

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Cited by 24 publications
(15 citation statements)
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“…In order to figure out the reason for recombination enhancement, the dark J-V characteristics of hole-only and electron-only devices were measured with the structure of ITO/PEDOT: PSS/active layer/Au and ITO/active layer/PDINO/Ag shown in Figure 7 . The apparent charge carrier mobility of blend films is evaluated through the spare charge limit current (SCLC) method [ 30 , 31 ]. According to the Mott–Gurney law, the current density is given by (Equation (1)): where J is the current density, ε 0 is the permittivity of free space, ε r is the relative dielectric constant of the BHJ layer, μ is the charge carrier mobility, L is the thickness of the BHJ layer and V is the voltage drop across the device [ 32 ].…”
Section: Resultsmentioning
confidence: 99%
“…In order to figure out the reason for recombination enhancement, the dark J-V characteristics of hole-only and electron-only devices were measured with the structure of ITO/PEDOT: PSS/active layer/Au and ITO/active layer/PDINO/Ag shown in Figure 7 . The apparent charge carrier mobility of blend films is evaluated through the spare charge limit current (SCLC) method [ 30 , 31 ]. According to the Mott–Gurney law, the current density is given by (Equation (1)): where J is the current density, ε 0 is the permittivity of free space, ε r is the relative dielectric constant of the BHJ layer, μ is the charge carrier mobility, L is the thickness of the BHJ layer and V is the voltage drop across the device [ 32 ].…”
Section: Resultsmentioning
confidence: 99%
“…Since AA enhances the exciton dissociation and charge collection, the carrier mobility of the devices is expected to be improved . Here, the carrier mobilities of the devices based on the BHJ layer with different volume ratios of AA to CB are measured by the space charge limiting current (SCLC) model. , ITO/ZnO/PBDB-T:N2200/PDINO/Al electron-only devices and ITO/PEDOT:PSS/PBDB-T:N2200/MoO 3 /Ag hole-only devices were prepared to support the measurement. The mobility ratio of the hole to the electron (μ h /μ e ) is shown in Figure , and the values of mobilities were tabulated in Table .…”
Section: Resultsmentioning
confidence: 99%
“…In order to understand the effect of LiF on the charge transfer in devices, we characterized the dark J−V characteristics of single charge carrier devices (ITO/ZnO/PM6:Y6/ETL/Ag or Al) and estimated the electron mobility through the space limited current (SCLC) model as shown in Figure 7. 37,38 The results show that the electron mobilities of PFN-Br (8.47 × 10 −4 cm 2 V −1 s −1 ) and LiF (6.41 × 10 −4 cm 2 V −1 s −1 )-based devices are lower than that of L-PFN-Br (9.17 × 10 −4 cm 2 V −1 s −1 ), and the electron mobilities of PDINO (7.31 × 10 −4 cm 2 V −1 s −1 ) and LiF (6.41 × 10 −4 cm 2 V −1 s −1 ) devices are also lower than that of L-PDINO (8.26 × 10 −4 cm 2 V −1 s −1 ). These results indicate that LiF insertion can significantly improve electronic transport.…”
Section: δαmentioning
confidence: 99%