Simultaneous Imaging of Dopants and Free Charge Carriers by Monochromated EELS

Yang, Hongbin; Konečná, Andrea; Xu, Xianghan; Cheong, Sang‐Wook; Batson, Philip E.; Abajo, F. Javier García de; Garfunkel, Eric

doi:10.1021/acsnano.2c07540

Cited by 3 publications

(2 citation statements)

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“…36,37 Furthermore, EELS is particularly broadband and offers information on core-electron excitations with energies ∼10 2 eV, optical excitations around ∼10 0 eV and recently also vibrational excitations in the ∼10 −2 eV range. 38…”

Section: Introductionmentioning

confidence: 99%

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Analytical electron microscopy analysis of insulating and metallic phases in nanostructured vanadium dioxide

Krpenský,

Horák,

Kabát

et al. 2024

Nanoscale Adv.

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Section: Introductionmentioning

confidence: 99%

“…38 a Institute of Physical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic. E-mail: andrea.konecna@vutbr.cz; krapek@vutbr.cz…”

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confidence: 99%

Analytical electron microscopy analysis of insulating and metallic phases in nanostructured vanadium dioxide

Krpenský,

Horák,

Kabát

et al. 2024

Nanoscale Adv.

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Using electron energy-loss spectroscopy to measure nanoscale electronic and vibrational dynamics in a TEM

Kim,

Palmer,

Lee

et al. 2023

The Journal of Chemical Physics

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Electron energy-loss spectroscopy (EELS) can measure similar information to x-ray, UV–Vis, and IR spectroscopies but with atomic resolution and increased scattering cross-sections. Recent advances in electron monochromators have expanded EELS capabilities from chemical identification to the realms of synchrotron-level core-loss measurements and to low-loss, 10–100 meV excitations, such as phonons, excitons, and valence structures. EELS measurements are easily correlated with electron diffraction and atomic-scale real-space imaging in a transmission electron microscope (TEM) to provide detailed local pictures of quasiparticle and bonding states. This perspective provides an overview of existing high-resolution EELS (HR-EELS) capabilities while also motivating the powerful next step in the field—ultrafast EELS in a TEM. Ultrafast EELS aims to combine atomic-level, element-specific, and correlated temporal measurements to better understand spatially specific excited-state phenomena. Ultrafast EELS measurements also add to the abilities of steady-state HR-EELS by being able to image the electromagnetic field and use electrons to excite photon-forbidden and momentum-specific transitions. We discuss the technical challenges ultrafast HR-EELS currently faces, as well as how integration with in situ and cryo measurements could expand the technique to new systems of interest, especially molecular and biological samples.

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Description of electron mobilities in epitaxial lanthanum-doped barium stannate films: Influences of LO phonons, threading dislocation, and ionized donor defects

Thongnum

2023

Journal of Applied Physics

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Lanthanum-doped barium stannate (La-doped BaSnO3 or LBSO) has attracted the attention of researchers and engineers because of its wide range of potential applications in electronic and optoelectronic devices. This is due to a combination of its exceptional room temperature (RT) mobility of 320 cm2 V−1 s−1 and high visible range transparency. However, epitaxial LBSO films made using strategic deposition techniques such as molecular beam epitaxy, pulsed laser deposition, and magnetron sputtering show comparatively low RT mobilities, between 24 and 183 cm2 V−1 s−1, and an accurate description of these RT mobilities is still sought. Herein, we provide the underlying scattering mechanisms related to longitudinal optical (LO) phonons, threading dislocation, and ionized donor defects to elucidate the RT mobilities in LBSO epitaxial films. It was found that the total mobility estimated using Matthiessen's rule provided strong quantitative agreement with experimental results. The large polaron mobility based on LO phonon scattering dominated the whole spectrum of electron concentrations in this system. It was an upper bound mobility, i.e., the mobility limit attained at 320 cm2 V−1 s−1. The calculated mobility associated with LO phonon and threading dislocation scatterings adequately verified the experimental results between 150 and 183 cm2 V−1 s−1. The predicted results for all three scattering types were predominant in experimental data at less than 150 cm2 V−1 s−1. These investigations deepen our understanding of mechanisms governing the charge transport scattering in epitaxial LBSO films and pave the way for the development of novel semiconductor thin films for use in electronic and optoelectronic devices.

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Simultaneous Imaging of Dopants and Free Charge Carriers by Monochromated EELS

Cited by 3 publications

References 100 publications

Analytical electron microscopy analysis of insulating and metallic phases in nanostructured vanadium dioxide

Analytical electron microscopy analysis of insulating and metallic phases in nanostructured vanadium dioxide

Using electron energy-loss spectroscopy to measure nanoscale electronic and vibrational dynamics in a TEM

Description of electron mobilities in epitaxial lanthanum-doped barium stannate films: Influences of LO phonons, threading dislocation, and ionized donor defects

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