2022
DOI: 10.1039/d2ta07022g
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Simultaneous improvement of efficiency and stability of inverted organic solar cellviacomposite hole transport layer

Abstract: It is generally believed that the inverted structure is more beneficial for constructing highly stable organic solar cells (OSCs), but the power conversion efficiency (PCE) of current inverted OSCs lag...

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Cited by 23 publications
(14 citation statements)
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“…[49] The ideal factor n for OSCs of structure A and structure D is 1.27 and 1.12, respectively, which indicates that the device with structure D has weak bimolecular recombination and suppressed trap-assisted recombination, accounting for the improvement of FF. [48,50] This result is consistent with the previous results, proving the advantage of the bulk contact electrode-interface structure in full-solutionprocessed cells.…”
Section: Structure A)supporting
confidence: 92%
See 1 more Smart Citation
“…[49] The ideal factor n for OSCs of structure A and structure D is 1.27 and 1.12, respectively, which indicates that the device with structure D has weak bimolecular recombination and suppressed trap-assisted recombination, accounting for the improvement of FF. [48,50] This result is consistent with the previous results, proving the advantage of the bulk contact electrode-interface structure in full-solutionprocessed cells.…”
Section: Structure A)supporting
confidence: 92%
“…Based on the power law J SC ∝ I α , the value of α represents the degree of bimolecular recombination. [ 48 ] The α value of structure D (0.933) is slightly higher than that of structure A (0.929), indicating that the bulk contact structure can slightly suppress the bimolecular recombination. Meanwhile, the light intensity dependence of V OC is illustrated in Figure 4e.…”
Section: Resultsmentioning
confidence: 99%
“…The champion OSCs were made from PM6:L8-BO BHJ blends, displaying an excellent PCE of 18.87% ( V oc of 0.88 V, J sc of 26.96 mA cm −2 , FF of 79.70%) with I-MoO x HTLs, which is also superior to that based on PEDOT:PSS HTLs with the PCE of 18.26% ( V oc of 0.88 V, J sc of 26.22 mA cm −2 , FF of 79.42%). It represented the best-performing OSCs containing all-metal oxide charge transport layers so far 52–55 (Fig. 5e and Table S11†).…”
Section: Resultsmentioning
confidence: 98%
“…The C −2 −V plot yields a straight line under low voltage and the intercept with the voltage axis represents the built‐in voltage ( V bi ). [ 49 ] V bi for LBL‐O‐XY:CS 2 , LBL‐CF, and LBL‐CB devices were 0.96, 0.95, and 0.96 V, respectively (Figure S10 and Table S5, Supporting Information). Shallower trap states and lower number of trap states are conducive to enhancing charge transmission, reducing the probability of recombination and the loss of photocurrent.…”
Section: Resultsmentioning
confidence: 99%