Simultaneous MW/LW dual-band MOVPE HgCdTe 64x64 FPAs

Reine, M. B.; Hairston, A.; O'Dette, P.; Tobin, S. P.; Smith, F. T.; Musicant, B. L.; Mitra, P.; Case, F. C.

doi:10.1117/12.317588

Cited by 50 publications

(30 citation statements)

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“…A physics based numerical model has been developed based on the historical dual band structure fabricated by Reine 13 , et. al., consisting of p/n/n/N/P with different mole fraction of five layers of MCT for simultaneous operation at 77 K at MW and LW windows shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The schematic energy bandgap diagram is as shown in Fig. 1(b), which is clearly showing the peak as barrier for adjacent layer's carriers 13 25 Te layer has been etched out totally at middle of the layer for making common cathode electrode for both IR detector as the conductivity of all three n-N-N is same through the structure below cathode contact. The two anodes have been designed on top and bottom P-and p-type layer as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…The designed structure has been optically characterised by coupling modern optics equation with the basic semiconductor equations. The absorption phenomenon is dependent on the imaginary part of refractive indices of different material with respect to incident wavelength 13 . The physical models associated with the designed structure include analytically uniform doping for all regions.…”

Section: Introductionmentioning

confidence: 99%

“…The physics based model can provide useful design guidelines to design engineers for minimisation of crosstalk effects and bias selectivity issue for development of third generation IR technology [3][4] . In this study, we have considered historical structure fabricated by Reine 13 , et al for model development and calibration purposes. The device under consideration consists of multilayer hetero-junction structures based on Hg 1-x Cd x Te with different mole fractions (x) for operation in two different IR windows.…”

Section: Introductionmentioning

confidence: 99%

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Numerical Study of Dual band (MW/LW) IR Detector for Performance Improvement

Saxena¹

2017

Def. Sc. Jl.

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In the present study, an extensive numerical analysis has been performed and an effort has been made to understand the underlying physics, which is presently unclear for researchers for development of third generation FPA infrared detectors based on HgCdTe material. To reduce technology development cost associated with dual band photodetector for operation at MWIR and LWIR regions, a 2D theoretical model has been proposed including all the relevant physics. The structure under present study considers back-to-back diode structures to detect simultaneous MW/LW operative wavelength by changing the biasing polarity of the diodes. The optimum electrical and optical outputs from dual band detector have been achieved through performing design of experiments. The coupled basic semiconductor equations including nonlinear continuity, transport and Poisson's equations have been solved to achieve electrical (I-V) characteristics under no bias condition and modern optics equations has been coupled to semiconductor equations to obtain optical characteristics. The quantum efficiency of both detectors has been computed and compared with experimental results. The computed results obtained on the basis of proposed model accurately matches with the experimental results reported by others researcher. The results exhibit the quantum efficiencies, QE MW =95 per cent and QE LW =74.5 per cent, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Numerical Study of Dual band (MW/LW) IR Detector for Performance Improvement

Saxena¹

2017

Def. Sc. Jl.

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“…A variation on the original back to back concept was implemented using HgCdTe at Rockwell [112] and Santa Barbara Research Center [113]. Following the successful demonstration of multispectral detectors in LPE-grown HgCdTe devices [113], the MBE and MOCVD techniques have been used for the grown of a variety of multispectral detectors at Raytheon [27,[114][115][116][117], BAE Systems [118], Leti [28,30,[119][120][121], Selex and QinetiQ [29,122,123], DRS, [26,124,125] Teledyne and NVESD [126,127]. For more than a decade a steady progression have been made in a wide variety of pixel size (to as small as 20 µm.…”

Section: Multicolour Detectorsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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HgCdTe Photovoltaic Infrared Detectors

Baker¹

2010

Mercury Cadmium Telluride

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Simultaneous MW/LW dual-band MOVPE HgCdTe 64x64 FPAs

Cited by 50 publications

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Numerical Study of Dual band (MW/LW) IR Detector for Performance Improvement

Numerical Study of Dual band (MW/LW) IR Detector for Performance Improvement

New material systems for third generation infrared photodetectors

HgCdTe Photovoltaic Infrared Detectors

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