2007
DOI: 10.1016/j.susc.2007.04.044
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Simultaneous observation of oxygen uptake curves and electronic states during room-temperature oxidation on Si(0 0 1) surfaces by real-time ultraviolet photoelectron spectroscopy

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Cited by 20 publications
(13 citation statements)
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“…The different work functions of the samples were determined by fitting the SECOs according to ISECOE~HEE0×GEnormaleaEwhere H ( E − E 0 ) × G ( E ) was the convolution of a Heaviside step function with a Gaussian function, which accounted for the steep rise in intensity for kinetic energies higher than the work function, and e −aE accounted for the background. A similar expression was suggested by Ogawa et al and had proven to work well for determining the work function from SECO spectra. For more complex systems, like the ones investigated in this study, the background is more complicated.…”
Section: Methodsmentioning
confidence: 57%
“…The different work functions of the samples were determined by fitting the SECOs according to ISECOE~HEE0×GEnormaleaEwhere H ( E − E 0 ) × G ( E ) was the convolution of a Heaviside step function with a Gaussian function, which accounted for the steep rise in intensity for kinetic energies higher than the work function, and e −aE accounted for the background. A similar expression was suggested by Ogawa et al and had proven to work well for determining the work function from SECO spectra. For more complex systems, like the ones investigated in this study, the background is more complicated.…”
Section: Methodsmentioning
confidence: 57%
“…The third possibility is band bending. 27,30,31) In this phenomenon, carriers are excited to the surface state, defect state, and impurity state of nitrogen in diamond by heating, and then the band near the surface is bent by charge accumulation. If the shift in the C 1s spectra is caused by band bending, the amount of the valence band maximum (VBM) shift should be the same as that of the C 1s spectral shift.…”
Section: Temperature Dependence Of C 1s Photoelectron Andmentioning
confidence: 99%
“…2(a), black open squares), I PE rapidly increases with increasing V B up to ∼10 V and then remains almost at ∼0.2 µA independent of V B . The work function of Si is ∼5 eV [27], so excited photoelectrons can escape from the surface for 172-nm (7.2 eV) UV light irradiation, but their kinetic energies are < ∼2 eV. Such small kinetic energies of emitted photoelectrons account for the rapid increase followed by a plateau observed in the figure.…”
Section: Resultsmentioning
confidence: 93%