2022
DOI: 10.1016/j.diamond.2022.109122
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Simultaneously achieving narrowband and broadband light absorption enhancement in monolayer graphene

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Cited by 25 publications
(6 citation statements)
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“…This limitation hinders the practical applications of high-performance photodetectors based on 2D materials. To address this challenge, researchers have primarily focused on special device structure designs, such as distributed Bragg reflector microcavities, metallic reflectors, photonic crystal nanocavities, etc [154][155][156], to confine light within the 2D materials and thereby enhance light absorption. In addition, under the influence of an ultrahigh ferroelectric polarization field, the band of 2D materials in FeFETs can be changed, thereby broadening the light response range of the detector.…”
Section: Discussionmentioning
confidence: 99%
“…This limitation hinders the practical applications of high-performance photodetectors based on 2D materials. To address this challenge, researchers have primarily focused on special device structure designs, such as distributed Bragg reflector microcavities, metallic reflectors, photonic crystal nanocavities, etc [154][155][156], to confine light within the 2D materials and thereby enhance light absorption. In addition, under the influence of an ultrahigh ferroelectric polarization field, the band of 2D materials in FeFETs can be changed, thereby broadening the light response range of the detector.…”
Section: Discussionmentioning
confidence: 99%
“…Here graphene is defined using the anisotropy refractive index model with the in-plane refractive index ni = 3 + i5.446λ/3 μm -1 and the out-of-plane refractive index no = 1, which coincides well with the conductivity model in the near-IR band 8 . The Kerr effect of silicon is described using the relationship of relative permittivity and local electric field: 2 , where εr(ω) is the relative permittivity of silicon under electric field intensity, εr0(ω) is the intrinsic relative permittivity of silicon, χ (3) is the third-order susceptibility of silicon and |Eloc| is the amplitude of local electric field. Here εr0(ω) is set to 11.56 which is the square of the silicon's refractive index, and χ (3) is set to 2.79 × 10 -18 m 2 /V 2 , according to reported researches 9, 10 .…”
Section: Basic Model and Parameter Settingsmentioning
confidence: 99%
“…Graphene, as a novel 2D material, has been intriguing to researchers over the years because of its outstanding optical and electronic properties, such as full-band absorption rate, ultrafast respond speed, ultrahigh carrier mobility and highly tunable conductivity 1 . However, due to its ultrathin thickness, the interaction between light and monolayer graphene is very weak, which limits the application of graphene in the optical field 2 . To overcome this drawback, one of the promising methods of applying graphene to the optical field is to couple it with silicon, in order to combine the significant optical-electronic properties of the two materials.…”
Section: Introductionmentioning
confidence: 99%
“…However, the interaction between light and monolayer graphene is very weak due to the ultrathin thickness of graphene, which seriously limits the applications of graphene in the optical field. In order to greatly enhance the light-graphene interaction, many kinds of graphene-based resonators [ 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ] and perfect absorbers [ 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 ] have been proposed, and some applications of those structures have been demonstrated [ 35 , 36 , 37 , 38 , 39 ]. Until now, OB in graphene-based resonators has been theoretically and numerically studied [ 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 ].…”
Section: Introductionmentioning
confidence: 99%