Simultaneously introducing tetrahedral and pseudo-octahedron by single-element doping enables faster and more stable phase change memory

A Fast and High Endurance Phase Change Memory Based on In-Doped Sb2Te3

“…14 The sharp resistance differential between the crystalline phase of PCM, or low-resistance state, and the amorphous phase, or high-resistance state, which correspond to logic levels "0" and "1," respectively, is used to encode digital information. 15,16 In recent years, the PCRAM based on ternary Ge 2 Sb 2 Te 5 was released into the memory market as a storage-class memory, such as the Optane memory, which fills the performance gap between DRAMs and FLASHs. 17 In addition, the NVMe SSD product is considered a disruptor in the storage industry as it offers substantial improvements in performance such as speed and longevity.…”

“…Phase change random access memory (PCRAM) combines the advantages of nonvolatility and fast operation speed, thereby hopefully eliminating the distinction between data storage and memory. − The phase change material (PCM) glass’s extreme fragilityin which the atomic dynamics’ temperature dependence significantly deviates from Arrhenius behaviorensures quick and reversible phase transitions between crystalline and amorphous states when temperature changes . The sharp resistance differential between the crystalline phase of PCM, or low-resistance state, and the amorphous phase, or high-resistance state, which correspond to logic levels “0” and “1,” respectively, is used to encode digital information. , In recent years, the PCRAM based on ternary Ge 2 Sb 2 Te 5 was released into the memory market as a storage-class memory, such as the Optane memory, which fills the performance gap between DRAMs and FLASHs . In addition, the NVMe SSD product is considered a disruptor in the storage industry as it offers substantial improvements in performance such as speed and longevity .…”