SiN<sub>x</sub> and AlO<sub>x</sub> Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

McNab, Shona; Niu, Xinya; Khorani, Edris; Wratten, Ailish; Morisset, Audrey; Grant, Nicholas E.; Murphy, John D.; Altermatt, Pietro P.; Wright, Matthew; Wilshaw, Peter R.

doi:10.1109/jphotov.2022.3226706

Cited by 7 publications

(4 citation statements)

References 75 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ∆E v values in our case are 2.01 eV, 2.11 eV, and 2.15 eV, corresponding to T1, T2, and T3 devices. The higher value of ∆E v is helpful in blocking the holes from the TiO 2 /p-Si interface and, thus, beneficial in facilitating the selectivity of electron transport and blocking the holes [38].…”

Section: Resultsmentioning

confidence: 99%

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO₂ contact deposition temperature

Pandey,

Kumar,

Mondal

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Carrier selective contacts are a primary requirement for fabricating silicon heterojunction solar cells (SHSCs). TiO2 is a prominent carrier selective contact in SHSCs owing to its excellent optoelectronic features such as suitable band offset, work function, and cost-effectiveness. Herein, we fabricated simple SHSCs in an Al/TiO2/p-Si/Ti/Au device configuration. Ultrathin 3 nm TiO2 layers were deposited onto a p-type silicon substrate using the atomic layer deposition method. The deposition temperature of TiO2 layers varied from 100 °C to 250 °C. X-ray photoelectron spectroscopic studies suggest that deposition temperature highly affects the chemical states of TiO2 and reduces the formation of defective state densities at the Fermi energy. The optical band gap values of TiO2 layers are also altered from 3.13 eV to 3.27 eV when the deposition temperature increases. The work function tuning from -5.13 eV to -4.83 eV has also been observed in TiO2 layers, suggesting the variation in Fermi level tuning, which arises due to changes in carrier concentrations at higher temperatures. Several device parameters, such as ideality factor, trap density, reverse saturation current density, barrier height, etc., have been quantified to comprehend the effects of deposition temperature on photovoltaic device performance. The results suggest that the deposition temperature significantly influences the charge transport and device performance. At an optimum temperature, a significant reduction in charge carrier recombination and trap state density has been observed, which helps to improve power conversion efficiency.

show abstract

Section: Resultsmentioning

confidence: 99%

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO₂ contact deposition temperature

Pandey,

Kumar,

Mondal

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…[16][17][18] Al 2 O 3 appears particularly promising in this role because of its negative fixed charge that could enhance its performance when coupled with hole-selective contacts. [15] Another potential hole-selective material is cuprous oxide (Cu 2 O). In contrast to the other hole-selective materials mentioned above, Cu 2 O promotes selectivity through a small valence DOI: 10.1002/solr.202300727 Passivating contacts based on transition metal oxides are of great interest for applications in crystalline silicon (c-Si) solar cells due to their improved optical transparency and potential cost reduction.…”

Section: Introductionmentioning

confidence: 99%

“…Some alternative interlayers include SiO 2 , Al 2 O 3 , and HfO 2 . [15,16] They improve the passivation of the surface at the expense of increasing the contact resistivity. [16][17][18] Al 2 O 3 appears particularly promising in this role because of its negative fixed charge that could enhance its performance when coupled with hole-selective contacts.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Novel Interlayer Boosting the Performance of Evaporated Cu₂O Hole‐Selective Contacts in Si Solar Cells

Bartholazzi,

Shehata,

Basnet

et al. 2023

Solar RRL

View full text Add to dashboard Cite

Passivating contacts based on transition metal oxides are of great interest for applications in crystalline silicon (c‐Si) solar cells due to their improved optical transparency and potential cost reduction. In this work, the contact resistivity and passivation for thermally evaporated Cu2O are investigated and optimized, with and without an Al2O3 interlayer, as a hole‐selective contact to c‐Si. Additionally, we implement an Al y TiO x /TiO2 stack as a novel passivating tunnel interlayer for hole‐selective contacts, achieving an implied open‐circuit voltage iV oc of 630 mV and a record‐low J 0 of 212 fA cm−2 while maintaining a contact resistivity ρ c of 62 mΩ cm2. A record‐low ρ c of 8 mΩ cm2 for Cu2O‐based contacts is also demonstrated at the expense of passivation. The addition of the interlayer resulted in a 2% absolute improvement in the efficiency of proof‐of‐concept c‐Si cells with full‐area rear Cu2O contacts, reaching 19.1%.The demonstration of this novel interlayer stack provides new avenues to improve the performance also of other hole‐selective passivating contacts.

show abstract

Exploring hafnium oxide's potential for passivating contacts for silicon solar cells

Wratten

Pain

Yadav

et al. 2023

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

SiN_x and AlO_x Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Abstract: How to cite:Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

Cited by 7 publications

References 75 publications

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO₂ contact deposition temperature

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO₂ contact deposition temperature

Novel Interlayer Boosting the Performance of Evaporated Cu₂O Hole‐Selective Contacts in Si Solar Cells

Exploring hafnium oxide's potential for passivating contacts for silicon solar cells

Contact Info

Product

Resources

About

SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Abstract: How to cite:Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

Cited by 7 publications

References 75 publications

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature

Novel Interlayer Boosting the Performance of Evaporated Cu2O Hole‐Selective Contacts in Si Solar Cells

Exploring hafnium oxide's potential for passivating contacts for silicon solar cells

Contact Info

Product

Resources

About

SiN_x and AlO_x Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO₂ contact deposition temperature

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO₂ contact deposition temperature

Novel Interlayer Boosting the Performance of Evaporated Cu₂O Hole‐Selective Contacts in Si Solar Cells