Single atom Si nanoelectronics using controlled single-ion implantation

Mitic, M.; Andresen, S. E.; Yang, C. H.; Hopf, T.; Chan, Victor; Gauja, E.; Hudson, Fay E.; Buehler, T. M.; Brenner, R.; Ferguson, A. J.; Pakes, C. I.; Hearne, S.M.; Tamanyan, G Yu; Reilly, David; Hamilton, A. R.; Jamieson, David N.; Dzurak, A. S.; Clark, Robert G.

doi:10.1016/j.mee.2004.12.096

Cited by 11 publications

(8 citation statements)

References 15 publications

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“…Particularly fatal are statistical dopant fluctuations for a future solid state quantum processor based on single implanted qubit carriers like colour centres in diamond or phosphorous dopants in silicon [2,3,4,5]. So far, the only known methods to control the number of dopants utilize statistical thermal sources followed by a post-detection of the implantation event, either by the observation of Auger electrons, photoluminescence, phonons, the generation of electron-hole pairs or changes in the conductance of field effect transistors [6,7,8,9,10]. To make the detection of such an event successful the methods require either highly charged ions or high implantation energies which, as a down side, generate defects in the host material.…”

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confidence: 99%

Deterministic Ultracold Ion Source Targeting the Heisenberg Limit

et al. 2009

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The major challenges to fabricate quantum processors and future nano-solid-state devices are material modification techniques with nanometer resolution and suppression of statistical fluctuations of dopants or qubit carriers. Based on a segmented ion trap with mK laser-cooled ions we have realized a deterministic single-ion source which could operate with a huge range of sympathetically cooled ion species, isotopes or ionic molecules. We have deterministically extracted a predetermined number of ions on demand and have measured a longitudinal velocity uncertainty of 6.3 m/s and a spatial beam divergence of 600 microrad. We show in numerical simulations that if the ions are cooled to the motional ground state (Heisenberg limit) nanometer spatial resolution can be achieved.

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confidence: 99%

Deterministic Ultracold Ion Source Targeting the Heisenberg Limit

et al. 2009

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“…We have performed preliminary DC measurements at low temperature and observed reproducible gate-controlled charge transfer events in devices implanted with less than 10 dopant atoms 23 . Spurious charge transfer events resulting from charge motion in the substrate, or within SETs themselves, were suppressed by correlating the signals from the two SETs 18 .…”

Section: Preliminary Charge Transfer Measurementsmentioning

confidence: 96%

Nanofabrication of charge-based Si:P quantum computer devices using single-ion implantation

et al. 2005

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We report on progress towards a charge-based qubit using phosphorus atoms implanted in a silicon substrate 1 . Prototype devices have been fabricated using standard lithographic techniques together with a new method of controlled single ion implantation using on-chip detector electrodes. Positional accuracy of the implanted ions was achieved using a nanoaperture mask defined using electron beam lithography. The two implanted phosphorus atoms are positioned ~50 nm apart, to form a qubit test device. A series of process steps has been developed to repair implant damage, define surface control gates, and to define single electron transistors used for qubit readout via the detection of sub-electron charge transfer signals. Preliminary electrical measurements on these devices show single charge transfer events that are resilient to thermal cycling.

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“…Here, the common approach utilizes statistical thermal sources which provide a dense ion beam that has to be thinned out by several choppers and apertures. To ensure single ion implantation it is necessary to detect the implantation event by observing the generated Auger electrons, photoluminescence, phonons, electron-hole pairs or changes in the conductance of a field effect transistor [11,12,13,14,15]. Therefore, the implantation only works if either the ions are highly charged or if they are implanted with large kinetic energies.…”

Section: Motivationmentioning

confidence: 99%

Optimised focusing ion optics for an ultracold deterministic single ion source targeting nm resolution

Fickler

Schnitzler

Linke

et al. 2009

Journal of Modern Optics

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Using a segmented ion trap with mK laser-cooled ions we have realised a novel single ion source which can deterministically deliver a wide range of ion species, isotopes or ionic molecules [Schnitzler et al., Phys. Rev. Lett. 102, 070501 (2009)]. Experimental data is discussed in detail and compared with numerical simulations of ion trajectories. For the novel ion source we investigate numerically the influence of various extraction parameters on fluctuations in velocity and position of the beam. We present specialized ion optics and show from numerical simulations that nm resolution is achievable. The Paul trap, which is used as a single ion source, together with the presented ion optics, constitutes a promising candidate for a deterministic ion implantation method for applications in solid state quantum computing or classical nano-electronic devices.

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Single atom Si nanoelectronics using controlled single-ion implantation

Cited by 11 publications

References 15 publications

Deterministic Ultracold Ion Source Targeting the Heisenberg Limit

Deterministic Ultracold Ion Source Targeting the Heisenberg Limit

Nanofabrication of charge-based Si:P quantum computer devices using single-ion implantation

Optimised focusing ion optics for an ultracold deterministic single ion source targeting nm resolution

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