2012
DOI: 10.48550/arxiv.1210.4119
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Single-carrier impact ionization favored by a limited band dispersion

A. Darbandi,
O. Rubel

Abstract: A critical requirement for high gain and low noise avalanche photodiodes is the single-carrier avalanche multiplication. We propose that the single-carrier avalanche multiplication can be achieved in materials with a limited width of the conduction or valence band resulting in a restriction of kinetic energy for one of the charge carriers. This feature is not common to the majority of technologically relevant semiconductors, but it is observed in chalcogenides, such as Selenium and compound I 2 -II-IV-VI 4 all… Show more

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“…The Brillouin zone was sampled using a Monkhorst-Pack [19] 20 × 20 × 18 k-point mesh. Further details regarding the geometry of the model structure and convergence criteria have been reported elsewhere [12,20].…”
Section: Calculation Methodsmentioning
confidence: 99%
See 3 more Smart Citations
“…The Brillouin zone was sampled using a Monkhorst-Pack [19] 20 × 20 × 18 k-point mesh. Further details regarding the geometry of the model structure and convergence criteria have been reported elsewhere [12,20].…”
Section: Calculation Methodsmentioning
confidence: 99%
“…The threshold energies for electrons and holes are derived from analysis of the t-Se band structure taking into account energy and momentum conservation requirements [12]. The results of the calculation suggest that the ionization threshold in t-Se is approximately equal to the energy gap (E th,e = E g and E th,h = 1.05E g [12]).…”
Section: Pair Creation Energymentioning
confidence: 99%
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