Single-cavity 8 MeV race-track microtron

Asgekar, Vivek; Bhalla, Rakesh; Raye, B S; Bhiday, M. R.; Bhoraskar, V.N.

doi:10.1007/bf02847886

Cited by 17 publications

(3 citation statements)

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“…After that, the precipitate was washed with ethanol, centrifuged and dried to get the final Cu2ZnSnS4nano-powder. Indigenously developed Race-Track Microtron accelerator having 6 MeV energy electron beam with faraday cup attached to a counter (1count=10 11 electrons) was used [25] for irradiation. To determine crystal structure and crystallite size of the sample X-ray diffractometer D8 Advance BRUKER AXS was used with Cu Kα ray of wavelength 1.54 Å.…”

Section: Methodsmentioning

confidence: 99%

Effect of 6 MeV electron irradiation on nano-Cu2ZnSnS4

Kandare

Bhoraskar

Phatangare

et al. 2021

J Mater Sci: Mater Electron

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Microwave synthesized nano sized Cu2ZnSnS4 (CZTS) powder was irradiated with 6 MeV electrons, to investigate stability under radiation. The structural, optical, vibrational and morphological properties were explored using X-ray diffraction, UV-Visible spectroscopy, Raman spectroscopy and Scanning Electron Microscope (SEM).The irradiated sample shows significant change in properties when compared to the pristine sample. X ray peak broadening analysis has been used to estimate the crystallite size and lattice strain. Raman spectroscopy analysis confirms the transition of ordered kesterite to disordered kesterite phase after electron irradiation at electron fluence of 4 x10 15 e -/cm 2 . CZTS nano-particles having hierarchical flower like morphology starts agglomerating after electron irradiation as observed from SEM images. The sample did not amorphize upto the highest fluence 4 x 10 15 e -/cm 2 employed in this study.

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Section: Methodsmentioning

confidence: 99%

Effect of 6 MeV electron irradiation on nano-Cu2ZnSnS4

Kandare

Bhoraskar

Phatangare

et al. 2021

J Mater Sci: Mater Electron

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“…Similarly, four samples of porous silicon prepared at different current densities were exposed to 60 MeV silicon ions. Using the Race-track microtron facility (Asgekar et al 1980) of this laboratory another set of four silicon samples and diodes were exposed to 6MeV electrons of four different fluences in the range 1014-1015 e/cm 2. In case of oxygen and silicon ions, the ion beam was defocused to obtain uniform intensity across the sample surface, covering a rectangular area ~ 8 mm in length and 5 mm in width.…”

Section: Methodsmentioning

confidence: 99%

Irradiation effects in semiconductor

Bhoraskar

1997

Bull Mater Sci

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Samples of crystalline silicon, porous silicon, gallium arsenide and silicon diodes were exposed to 50-80 MeV silicon and oxygen ions in the tluence range of the order of 101a to 1014 ions/era2. The irradiated samples were characterized to obtain information on the relative concentration and depth distribution of the induced defects. For comparison a few silicon diodes and crystalline silicon samples were also exposed to 6MeV electrons. The main techniques used for the analysis of silicon samples were low angle X-ray diffraction, photoluminescence spectroscopy and lifetime of minority carriers, whereas diodes were characterized on the basis of switching parameters. It is observed that a large number of defects are produced in the surface region of each of the irradiated semiconductor sample though the energy deposited in the surface region through electronic loss is three orders of magnitude greater than that of nuclear collisions.

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“…The pellets of the K2Ca2(SO4)3:Eu nanorods were irradiated by 6 MeV electrons at different fluences, varying from 2.5×10 11 to 5×10 13 e/cm 2 at room temperature. The electron beam was made available from the Rack Track Microtron facility at the Department of Physics, Savitribai Phule Pune University [28]. Similarly, the pellets of the K2Ca2(SO4)3:Eu nanorods were also exposed by 60 Co gamma source available at Department of Chemistry, Savitribai Phule Pune University for various doses over the range 0.1 Gy to 100 kGy for comparison.…”

Section: Irradiation With 6 Mev Electrons and 60 Co Gamma Raysmentioning

confidence: 99%

Characteristics of K2Ca2(SO4)3:Eu TLD nanophosphor for its applications in electron and gamma rays dosimetry

et al. 2020

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Nanorods (~25 nm × 200 nm) of K2Ca2(SO4)3:Eu phosphor (powder) were synthesized by chemical coprecipitation method followed by annealing at 700 °C. Dimensions of nanorods were confirmed by TEM and XRD. The material (pellets) was irradiated by 60 Co gamma rays for various doses over the range of 0.1 Gy to 100 kGy and also by 6 MeV electrons at different fluences varying from 2.5×10 11 e/cm 2 to 5×10 13 e/cm 2 at room temperature. Thermoluminescence (TL) and photoluminescence (PL) of the gamma and electron irradiated phosphors were also studied. TL glow curve apparently exhibited a peak at around 152 °C with a small hump around 258 °C. The exact number of peaks in a glow curve were determined by thermal cleaning method and glow curves were further deconvoluted by CGCD method to determine trapping parameters. PL emission spectrum consisted of a single emission band at 388 nm (Eu 2+ emission) on excitation by 320 nm. The intensity of this peak increased with the electron fluence up to 5×10 12 e/cm 2 and decreases thereafter. The TL response is linear in the dose range from 0.1 Gy to 1 kGy of gamma radiation and electron fluence range from 2.5×10 11 e/cm 2 to 2.5×10 12 e/cm 2 . The electronic structures of the pristine and Eu doped K2Ca2(SO4)3 materials were analyzed by means of firstprinciples density functional theory (DFT) calculations. The dosimetric characteristics suggest that the K2Ca2(SO4)3:Eu nanophosphor can be useful for its application in radiation dosimetry, especially, for measurement of high-doses of gamma and electrons.

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Single-cavity 8 MeV race-track microtron

Cited by 17 publications

References 1 publication

Effect of 6 MeV electron irradiation on nano-Cu2ZnSnS4

Effect of 6 MeV electron irradiation on nano-Cu2ZnSnS4

Irradiation effects in semiconductor

Characteristics of K2Ca2(SO4)3:Eu TLD nanophosphor for its applications in electron and gamma rays dosimetry

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