Single-Chip Multiband EGPRS and SAW-Less LTE WCDMA CMOS Receiver With Diversity

Xie, Hao; Oliaei, O.; Rakers, Patrick; Fernández, Rocío del Río; Xiang, Jin; Parkes, J; Riches, J.; Verellen, Richard; Rahman, M. M.; Bhan, Vivek; Schwartz, D.

doi:10.1109/tmtt.2012.2187796

Cited by 38 publications

(14 citation statements)

References 11 publications

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“…The gain steps are believed to be caused by Low Noise Amplifier (LNA) gain control. Modern RF CMOS transceivers [12] implement discrete gain steps in the LNA to deliver the best compromise between linearity and power consumption. The LNA may be implemented with two (UE1 & UE2) or three gain (UE3) modes.…”

Section: Conducted Smartphone Measurementsmentioning

confidence: 99%

Empirical LTE Smartphone Power Model with DRX Operation for System Level Simulations

Lauridsen

Mogensen

Noel³

2013

2013 IEEE 78th Vehicular Technology Conference (VTC Fall)

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An LTE smartphone power model is presented to enable academia and industry to evaluate users' battery life on system level. The model is based on empirical measurements on a smartphone using a second generation LTE chipset, and the model includes functions of receive and transmit data rates and power levels. The first comprehensive Discontinuous Reception (DRX) power consumption measurements are reported together with cell bandwidth, screen and CPU power consumption.The transmit power level and to some extent the receive data rate constitute the overall power consumption, while DRX proves to be a very efficient method to prolong the battery life.

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Section: Conducted Smartphone Measurementsmentioning

confidence: 99%

Empirical LTE Smartphone Power Model with DRX Operation for System Level Simulations

Lauridsen

Mogensen

Noel³

2013

2013 IEEE 78th Vehicular Technology Conference (VTC Fall)

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“…Several RF variable gain amplifier topologies have been reported using different techniques. Generally, RF gain control mechanisms are performed by using Manuscript a variable transconductance of transistors [2], a current-steering technique [2], [3], a variable load resistance [2], [4], and an operational-amplifier based method [1]. However, these methods can degrade not only noise and matching performance, but also limit the bandwidth (BW) due to increased parasitic to achieve fine gain resolution.…”

Section: Introductionmentioning

confidence: 99%

A Wideband Receiver Front-End Employing New Fine RF Gain Control Driven by Frequency-Translated Impedance Property

Kwon

Han²,

Nam³

2015

IEEE Microw. Wireless Compon. Lett.

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A new gain control methodology employing frequency-translated (FT) impedance property is proposed for RF amplifiers. By adaptively controlling the baseband impedance through the FT property, fine RF gain control can be achieved without degradation in the RF characteristics such as noise figure (NF), gain, input matching, and bandwidth. To verify the proposed method, a wideband receiver (RX) front-end (FE) with the fine RF gain control has been designed for 2G/3G/4G cellular applications. The implemented RX FE consists of a wideband capacitor cross-coupled common-gate low-noise amplifier, a 25% duty cycle passive mixer with baseband impedance array, a baseband transconductor with variable input capacitance, and a trans-impedance amplifier.The RX FE was fabricated in a 65 nm CMOS process. It has a conversion gain from 26 dB to 42 dB with 1 dB gain resolution, and achieves a minimum NF lower than 3.3 dB, out-of-band IIP3 of , and IIP2 of more than 56 dBm. It draws an average current of 14.8 mA from a 1.2 V supply voltage.

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“…Continuous-time filters are widely employed in system-on-chip wireless communication systems, such as long-term evolution (LTE) cellular, global navigation satellite system (GNSS), and ultra-wideband (UWB) [1][2][3][4]. These systems require more and more bandwidth (BW) and selectivity because of the growing number of users and systems working together.…”

Section: Introductionmentioning

confidence: 99%

Design methodology for common‐mode stability of OTA‐based gyrators

Ghamari

Tasselli

Botteron

et al. 2015

Circuit Theory & Apps

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Abstract-This paper presents a design methodology for common-mode (CM) stability of operational transconductance amplifier (OTA)-based gyrators. The topology of gm − C active inductors is briefly reviewed. Subsequently, a comprehensive mathematical analysis on the CM stability of OTA-based gyrators is presented. Sufficient requirements for the gyrator's CM stability, that easily can be considered during the design process of common-mode feedback (CMFB) amplifiers, are defined. Based on these stability requirements, a design methodology and a design procedure are proposed. Finally, in order to validate the proposed procedure, a resonator with 20 MHz resonance frequency and a quality factor of 20 is fabricated with UMC 180-nm CMOS technology and its CM stability is examined.

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Single-Chip Multiband EGPRS and SAW-Less LTE WCDMA CMOS Receiver With Diversity

Cited by 38 publications

References 11 publications

Empirical LTE Smartphone Power Model with DRX Operation for System Level Simulations

Empirical LTE Smartphone Power Model with DRX Operation for System Level Simulations

A Wideband Receiver Front-End Employing New Fine RF Gain Control Driven by Frequency-Translated Impedance Property

Design methodology for common‐mode stability of OTA‐based gyrators

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