Single-Crystal Bismuth Iodide Gamma-Ray Spectrometers

Baciak, James E.; Nino, Juan C.; Qiu, Wei; Lintereur, Azaree T.

doi:10.21236/ada574009

Cited by 3 publications

(4 citation statements)

References 14 publications

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“…Searching for HTLs with matched energy levels is thus crucial for BiI 3 -based PV devices. Furthermore, the softness of the material makes it challenging to handle without scratching the film and causing pinholes to occur [374]. Finally, BiI 3 devices have exhibited improved stability over Sn-, Ge-and Pb-based perovskites.…”

Section: Binary Halidesmentioning

confidence: 99%

Perovskite-inspired materials for photovoltaics and beyond—from design to devices

et al. 2021

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Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed.

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Section: Binary Halidesmentioning

confidence: 99%

Perovskite-inspired materials for photovoltaics and beyond—from design to devices

et al. 2021

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“…Lastly, BiI 3 is a very soft material with a Vickers Hardness of 12−15. 25 The ease with which one may scratch the material is a liability for shunting and catastrophic failure in thin-film PV cells. In addition, one must evaluate the effect of this softness and the crystal structure's anisotropy when the material is heated and cooled in traction with its substrate, in relation to dislocation generation (plastic deformation), cracks, and pinholes, all of which could reduce device performance.…”

Section: The Journal Of Physical Chemistry Lettersmentioning

confidence: 99%

“…Lastly, BiI 3 is a very soft material with a Vickers Hardness of 12–15 . The ease with which one may scratch the material is a liability for shunting and catastrophic failure in thin-film PV cells.…”

mentioning

confidence: 99%

Investigation of Bismuth Triiodide (BiI₃) for Photovoltaic Applications

Brandt

Kurchin

Hoye

et al. 2015

J. Phys. Chem. Lett.

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193

229

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Guided by predictive discovery framework, we investigate bismuth triiodide (BiI3) as a candidate thin-film photovoltaic (PV) absorber. BiI3 was chosen for its optical properties and the potential for "defect-tolerant" charge transport properties, which we test experimentally by measuring optical absorption and recombination lifetimes. We synthesize phase-pure BiI3 thin films by physical vapor transport and solution processing and single-crystals by an electrodynamic gradient vertical Bridgman method. The bandgap of these materials is ∼1.8 eV, and they demonstrate room-temperature band-edge photoluminescence. We measure monoexponential recombination lifetimes in the range of 180-240 ps for thin films, and longer, multiexponential dynamics for single crystals, with time constants up to 1.3 to 1.5 ns. We discuss the outstanding challenges to developing BiI3 PVs, including mechanical and electrical properties, which can also inform future selection of candidate PV absorbers.

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“…21 Moreover, room-temperature photoluminescence (PL) of BiI 3 at ∼530 nm, both in vapor and solution-processed thin films, 21 endorses its promising application in optoelectronic devices. From the application point of view, BiI 3 has been previously investigated intensively in gamma-ray detectors 24 and X-ray radiation, 25 and recently, theoretical 21 and experimental studies 26,27 have shown its potential to be used as a photovoltaic absorber. However, so far, only a few attempts have been made to integrate BiI 3 into photovoltaic (PV) devices.…”

Section: ■ Introductionmentioning

confidence: 99%

Vapor Annealing Controlled Crystal Growth and Photovoltaic Performance of Bismuth Triiodide Embedded in Mesostructured Configurations

Kulkarni

Singh

Jena

et al. 2018

ACS Appl. Mater. Interfaces

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Low stability of organic-inorganic lead halide perovskite and toxicity of lead (Pb) still remain a concern. Therefore, there is a constant quest for alternative nontoxic and stable light-absorbing materials with promising optoelectronic properties. Herein, we report about nontoxic bismuth triiodide (BiI) photovoltaic device prepared using TiO mesoporous film and spiro-OMeTAD as electron- and hole-transporting materials, respectively. Effect of annealing methods (e.g., thermal annealing (TA), solvent vapor annealing (SVA), and Petri dish covered recycled vapor annealing (PR-VA)) and different annealing temperatures (90, 120, 150, and 180 °C for PR-VA) on BiI film morphology have been investigated. As found in the study, grain size increased and film uniformity improved as temperature was raised from 90 to 150 °C. The photovoltaic devices based on BiI films processed at 150 °C with PR-VA treatment showed power conversion efficiency (PCE) of 0.5% with high reproducibility, which is, so far, the best PCE reported for BiI photovoltaic device employing organic hole-transporting material (HTM), owing to the increase in grain size and uniform morphology of BiI film. These devices showed stable performance even after 30 days of exposure to 50% relative humidity, and after 100 °C heat stress and 20 min light soaking test. More importantly, the study reveals many challenges and room (discussed in the details) for further development of the BiI photovoltaic devices.

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Single-Crystal Bismuth Iodide Gamma-Ray Spectrometers

Cited by 3 publications

References 14 publications

Perovskite-inspired materials for photovoltaics and beyond—from design to devices

Perovskite-inspired materials for photovoltaics and beyond—from design to devices

Investigation of Bismuth Triiodide (BiI₃) for Photovoltaic Applications

Vapor Annealing Controlled Crystal Growth and Photovoltaic Performance of Bismuth Triiodide Embedded in Mesostructured Configurations

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Single-Crystal Bismuth Iodide Gamma-Ray Spectrometers

Cited by 3 publications

References 14 publications

Perovskite-inspired materials for photovoltaics and beyond—from design to devices

Perovskite-inspired materials for photovoltaics and beyond—from design to devices

Investigation of Bismuth Triiodide (BiI3) for Photovoltaic Applications

Vapor Annealing Controlled Crystal Growth and Photovoltaic Performance of Bismuth Triiodide Embedded in Mesostructured Configurations

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Investigation of Bismuth Triiodide (BiI₃) for Photovoltaic Applications