Single crystal Fe films grown on Ge (001) substrates by magnetron sputtering

Lou, J.; Daigle, A.; Chen, L.; Wu, Yaqiao; Harris, Vincent G.; Vittoria, C.; Sun, Nian X.

doi:10.1063/1.2339041

Cited by 8 publications

(11 citation statements)

References 14 publications

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“…The M-H loops of the as-deposited and annealed epi-Fe films exhibit similar squareness (figure 3(b)). The coercivity of the as-deposited epi-Fe film is 23.9 Oe, much lower than the as-deposited poly-Fe film, analogous to that reported by Lou et al [10] The saturation magnetization increased by a factor of 1.2 upon annealing at 275 • C is observed. Several samples have been analyzed to confirm reproducibility.…”

Section: Resultssupporting

confidence: 85%

Enhanced ferromagnetic Fe-rich germanide film grown using magnetron sputtering employing a post-deposition anneal

Wong¹,

Ho²,

Dong³

2008

J. Phys. D: Appl. Phys.

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We describe the formation of a ferromagnetic Fe-rich germanide layer by a two-step process involving magnetron sputtering and annealling. A thin epitaxial iron (epi-Fe) film is deposited on the Ge (0 0 1) substrate and then annealed at 275 • C in nitrogen inducing germanide formation. Surprisingly, we observe an enhancement in saturation magnetization in germanide films. Secondary ion mass spectroscopy and x-ray diffraction confirm the formation of a thin Fe-rich germanide layer whilst high resolution transmission electron imaging suggests it to be Fe 3 Ge.

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Section: Resultssupporting

confidence: 85%

Enhanced ferromagnetic Fe-rich germanide film grown using magnetron sputtering employing a post-deposition anneal

Wong¹,

Ho²,

Dong³

2008

J. Phys. D: Appl. Phys.

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“…Recently, Fe films interfaced with semiconductors materials have attracted particular attention owing to the possibility of new functionalities that arise from such hybridization of ferromagnetic metals and semiconductors 1 2 3 . Successful growth of high-quality crystalline Fe film on various semiconductor surfaces, such as GaAs 4 5 6 , ZnSe 6 7 , MgO 8 9 10 , and Ge 6 11 12 , by an epitaxial technique further adds to the interest in Fe/semiconductor combinations 13 .…”

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confidence: 99%

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Bac

Lee

et al. 2015

Sci Rep

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We report an observation of uniaxial magnetic anisotropy along the [100] crystallographic direction in crystalline Fe film grown on Ge buffers deposited on a (001) GaAs substrate. As expected, planar Hall resistance (PHR) measurements reveal the presence of four in-plane magnetic easy axes, indicating the dominance of the cubic anisotropy in the film. However, systematic mapping of the PHR hysteresis loops observed during magnetization reversal at different field orientations shows that the easy axes along the and are not equivalent. Such breaking of the cubic symmetry can only be ascribed to the presence of uniaxial anisotropy along the direction of the Fe film. Analysis of the PHR data measured as a function of orientation of the applied magnetic field allowed us to quantify the magnitude of this uniaxial anisotropy field as Oe. Although this value is only 1.5% of cubic anisotropy field, its presence significantly changes the process of magnetization reversal, revealing the important role of the uniaxial anisotropy in Fe films. Breaking of the cubic symmetry in the Fe film deposited on a Ge buffer is surprising, and we discuss possible reason for this unexpected behavior.

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“…67) In addition to the films, nanostructures of iron germanide on Si substrates are of great interest because nanostructuring can yield new properties and new physics. However, epitaxial growth of Fe(Ge)=Si with sharp interfaces is difficult because the interfaces are easily disordered due to silicidation (germanidation), [68][69][70][71] leading to non-controllable electronic states and a dead layer at the interface. Furthermore, the crystal structure control in this system is difficult owing to the complicated phase diagram.…”

Section: Crystal Structure Control By Nucleation Controlmentioning

confidence: 99%

Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application

Nakamura

2015

Jpn. J. Appl. Phys.

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We developed the epitaxial growth technique of various kinds of nanodots (NDs) on Si substrates using ultrathin SiO 2 film. Fe-based NDs were epitaxially grown on Si substrates without intermixing with Si atoms in Si substrates despite the easy reaction of Si and Fe, resulting in atomically sharp interfaces between NDs and substrates. The status control of the nuclei was important at the nucleation stage in terms of control of ND crystal structure. The proper nuclei also suppressed the undesirable reactions such as intermixing of Fe and Si in Si substrates. The epitaxial NDs formed by our technique can supply the prospect for the application to some devices.

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Single crystal Fe films grown on Ge (001) substrates by magnetron sputtering

Cited by 8 publications

References 14 publications

Enhanced ferromagnetic Fe-rich germanide film grown using magnetron sputtering employing a post-deposition anneal

Enhanced ferromagnetic Fe-rich germanide film grown using magnetron sputtering employing a post-deposition anneal

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application

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