Single Crystal Growth and Magnetic Properties of CeRh2Si2

Settai, Rikio; Misawa, Akira; Araki, Shingo; Kosaki, Masato; Sugiyama, Kiyohiro; Takeuchi, Tetsuya; Kindo, Koichi; Haga, Yoshinori; Yamamoto, Etsuji; Ōnuki, Yoshichika

doi:10.1143/jpsj.66.2260

Cited by 65 publications

(57 citation statements)

References 10 publications

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“…CeRh 2 Si 2 and CeCu 2 Ge 2 CeRh 2 Si 2 exhibits antiferromagnetic order with a quite high Néel temperature T N = 36 K at ambient pressure, 33,34 which has to be compared to a correspondingly high Kondo temperature T K 15, 35 (cf. Table I).…”

Section: Superconductivity Near First Order Transitionsmentioning

confidence: 99%

Superconductivity in Ce- and U-Based “122” Heavy-Fermion Compounds

et al. 2012

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Section: Superconductivity Near First Order Transitionsmentioning

confidence: 99%

Superconductivity in Ce- and U-Based “122” Heavy-Fermion Compounds

et al. 2012

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“…CeRh 2 Si 2 is a heavy-fermion antiferromagnet, crystallizing in the ThCr 2 Si 2 tetragonal structure, which can be driven to a magnetic instability either by applying pressure 1 or magnetic field 2,3 . It exhibits a secondorder antiferromagnetic transition at the Néel temperature T N = 36 K and a first-order phase transition at T 1,2 = 26 K 4,5 .…”

Section: Introductionmentioning

confidence: 99%

High-field metamagnetism in the antiferromagnetCeRh2Si2

et al. 2010

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A study of the antiferromagnet CeRh2Si2 by torque, magnetostriction, and transport in pulsed magnetic fields up to 50 Tesla and by thermal expansion in static fields up to 13 Tesla is presented. The magnetic field-temperature phase diagram of CeRh2Si2, where the magnetic field is applied along the easy axis c, is deduced from these measurements. The second-order phase transition temperature TN and the first-order phase transition temperature T1,2 (= 36 K and 26 K at zero-field, respectively) decrease with increasing field. The field-induced antiferromagnetic-to-paramagnetic borderline Hc, which equals 26 T at 1.5 K, goes from first-order at low temperature to secondorder at high temperature. The magnetic field-temperature phase diagram is found to be composed of (at least) three different antiferromagnetic phases. These are separated by the first-order lines H1,2, corresponding to T1,2 at H = 0, and H2,3, which equals 25.5 T at 1.5 K. A maximum of the T 2 -coefficient A of the resistivity is observed at the onset of the high-field polarized regime, which is interpreted as the signature of an enhanced effective mass at the field-induced quantum instability. The magnetic field dependence of the A coefficient in CeRh2Si2 is compared with its pressure dependence, and also with the field dependence of A in the prototypal heavy-fermion system CeRu2Si2.

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“…CeRh 2 Si 2 belongs to the heavy fermion compounds with the occurrence of strong magnetic correlations by developing a large molecular field H int 10 which is at the origin of the drop of the γ term of the specific heat. Another interesting feature is that the dominant Ising character with M 0 aligned along the c axis governs the magnetic structure properties while the Pauli susceptibility in low field is almost isotropic as if there is a decoupling between Ising local moments and the behavior of the itinerant electrons 11 .…”

Section: Introductionmentioning

confidence: 99%

“…Under magnetic field the AFM is suppressed (for T < 18 K) by a cascade of first order transitions AF2 → AF3 → PPM with two critical metamagnetic fields H 2−3 =25.7 T and H c =26 T 11,12 . As the AF3 phase exists in a narrow magnetic field domain, the main focus will be given later by the change between the AF and PPM phases.…”

Section: Introductionmentioning

confidence: 99%

Fermi surface instabilities inCeRh2Si2at high magnetic field and pressure

et al. 2015

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We present thermoelectric power (TEP) studies under pressure and high magnetic field in the antiferromagnet CeRh2Si2 at low temperature. Under magnetic field, large quantum oscillations are observed in the TEP, S(H), in the antiferromagnetic phase. They suddenly disappear when entering in the polarized paramagnetic (PPM) state at Hc pointing out an important reconstruction of the Fermi surface (FS). Under pressure, S/T increases strongly of at low temperature near the critical pressure Pc, where the AF order is suppressed, implying the interplay of a FS change and low energy excitations driven by spin and valence fluctuations. The difference between the TEP signal in the PPM state above Hc and in the paramagnetic state (PM) above Pc can be explained by different FS. Band structure calculations at P = 0 stress that in the AF phase the 4f contribution at the Fermi level (EF ) is weak while it is the main contribution in the PM domain. By analogy to previous work on CeRu2Si2, in the PPM phase of CeRh2Si2 the 4f contribution at EF will drop.

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Single Crystal Growth and Magnetic Properties of CeRh₂Si₂

Cited by 65 publications

References 10 publications

Superconductivity in Ce- and U-Based “122” Heavy-Fermion Compounds

Superconductivity in Ce- and U-Based “122” Heavy-Fermion Compounds

High-field metamagnetism in the antiferromagnetCeRh2Si2

Fermi surface instabilities inCeRh2Si2at high magnetic field and pressure

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