2005
DOI: 10.1016/j.jcrysgro.2005.01.107
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Single-crystal growth and properties of AgCd2GaS4

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Cited by 22 publications
(12 citation statements)
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“…For example, by replacing Ag with Li, LiGaS 2 shows better LDTs benefitting from wider E g (∼4 eV) but concurrently the smaller SHG coefficients (10.7 pm/V) than those of AGS (13.7 pm/V). 15 There are also some compounds that possess strong SHG coefficients with much smaller E g , such as AgCd 2 GaS 4 (E g = 2.32 eV, d 33 = −26.98 pm/V) 16 and Cu 3 AsS 4 (E g = 0.89 eV, d 33 = −80.01 pm/V). 17 Fortunately, some promising advancements, such as Li 2 ZnSiS 4 (E g = 3.9 eV, d 33 = 18.89 pm/V) 18 and CuZnPS 4 (E g = 3.9 eV, d 33 = 18.89 pm/V), 19 encourage researchers to keep exploring new candidates of mid-IR NLO materials in the chalcogenide family with DL structures.…”
Section: ■ Introductionmentioning
confidence: 99%
“…For example, by replacing Ag with Li, LiGaS 2 shows better LDTs benefitting from wider E g (∼4 eV) but concurrently the smaller SHG coefficients (10.7 pm/V) than those of AGS (13.7 pm/V). 15 There are also some compounds that possess strong SHG coefficients with much smaller E g , such as AgCd 2 GaS 4 (E g = 2.32 eV, d 33 = −26.98 pm/V) 16 and Cu 3 AsS 4 (E g = 0.89 eV, d 33 = −80.01 pm/V). 17 Fortunately, some promising advancements, such as Li 2 ZnSiS 4 (E g = 3.9 eV, d 33 = 18.89 pm/V) 18 and CuZnPS 4 (E g = 3.9 eV, d 33 = 18.89 pm/V), 19 encourage researchers to keep exploring new candidates of mid-IR NLO materials in the chalcogenide family with DL structures.…”
Section: ■ Introductionmentioning
confidence: 99%
“…This compound crystallizes in the orthorhombic symmetry, space group Pmn2 1 , with lattice parameters a ¼ 813.95 (9), b ¼ 693.94 (8) and c ¼ 660.14(7) pm and can be described as a superstructure of wurtzite [1,3]. The AgCd 2 GaS 4 is a semiconductor with n-type conductivity and energy gap E g ¼ 2.15 eV at 300 K [4].…”
Section: Introductionmentioning
confidence: 99%
“…Optical transparency is observed over the spectral range l ¼ 0.63-2.8 mm, the infra-red (IR) boundary has not been defined, it has a weak absorption peak at l ¼ 1.95 mm and absorption coefficient a ¼ 10-30 cm À1 depending on Cd/ (Ag,Ga) ratio in the crystal [4].…”
Section: Introductionmentioning
confidence: 99%
“…Studies of complex semiconductors are inspired by the need to increase understanding regarding formation of the band structure of such crystals related to their complicated composition and change in the volume of the elementary cells, which influences macroscopical physical properties as well. The crystal structure and properties of the AgCd 2 GaS 4 single crystals were investigated in [1][2][3][4][5][6][7]. This phase was shown to be a new fluorescent and photosensitive material for the near-IR region and a promising nonlinear optical material [8,9].…”
Section: Introductionmentioning
confidence: 99%