Single crystal growth and properties of AgGaGeS4

Yurchenko, O.M.; Olekseyuk, I. D.; Parasyuk, O.V.; Pankevich, V. Z.

doi:10.1016/j.jcrysgro.2004.11.319

Cited by 18 publications

(23 citation statements)

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“…Traditionally, AGGS was synthesized by vapor transport from high-purity elements in an evacuated sealed ampoules at about 1220 K. Then the as-prepared polycrystalline is placed in a twozone furnace by using Bridgman-Stockbarger method to growth, or is grown by the horizontal gradient freeze technique in transparent furnaces [9,10]. These methods are very useful and are of widespread importance.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and growth of nonlinear infrared crystal material AgGeGaS4 via a new reaction route

Wang

et al. 2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Synthesis and growth of nonlinear infrared crystal material AgGeGaS4 via a new reaction route

Wang

et al. 2009

Journal of Crystal Growth

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“…This crystal belongs to the acentric orthorhombic point symmetry group mm2 (the space group Fdd2) [1,3] and can be regarded as a representative of solid solutions Ag x Ga x Ge 1-x S 2 at x = 0.5 [1]. According to the X-ray studies [1], the unit cell parameters of AGGS are equal to a = 12.028 Å, b = 22.918 Å and c = 6.874 Å (Z = 12).…”

Section: Introductionmentioning

confidence: 99%

“…According to the X-ray studies [1], the unit cell parameters of AGGS are equal to a = 12.028 Å, b = 22.918 Å and c = 6.874 Å (Z = 12). A transparency of AGGS in the mid-IR spectral range (0.5-11.5 µm, with the bandgap E g = 2.78 eV) [3,4] and high enough second-order optical susceptibilities (d 31 = 15 pm/V, d 32 = 8 pm/V and d 33 = 8 pm/V [1]) make the material attractive for various nonlinear optic applications, in particular for parametric oscillators [1,[5][6][7]. Moreover, the studies of its radiation resistance [4] have shown that the laser damage threshold for AGGS is high enough (250 MW/cm 2 for the pulses with the duration 30 ns and the wavelength 1.064 µm).…”

Section: Introductionmentioning

confidence: 99%

Acoustic and elastic anisotropies of acoustooptic AgGaGeS4 crystals

Martynyuk-Lototska¹,

Parasyuk²,

Vlokh³

2016

Ukr. J. Phys. Opt.

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Abstract. We have experimentally studied the acoustic and elastic anisotropies of AgGaGeS 4 crystals. Basing on the acoustic wave velocities measured, we have determined the complete matrices of elastic stiffnesses and compliances. We have found that the orthorhombic unit cell of AgGaGeS 4 is only slightly distorted with respect to the prototypical tetragonal lattice. We have revealed a quite rare effect in AgGaGeS 4 crystals, an equality of the velocities of quasi-transverse and quasilongitudinal waves. When propagating along the direction of a so-called longitudinal-transverse 'acoustic axis', these waves become 'half-transverse' and 'half-longitudinal'. It has been found that the quasi-transverse acoustic wave that propagates in the crystallographic plane ac with the velocity 1570 m/s is the slowest wave in AgGaGeS 4 . The acoustooptic figure of merit for our crystals calculated following from the velocity of the slowest acoustic wave and rough estimation of the elastooptic coefficient can reach 500 . This suggests that AgGaGeS 4 can be a promising material for acoustooptic applications in the mid-IR spectral range.

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“…The quaternary g-phase that forms in the AgGaSe 2 -GeSe 2 system exists in the range of 65-88 mol% GeSe 2 at T ¼720 K with the melting point maximum at T¼995 K, which corresponds to the composition AgGaGe 3 Se 8 (space group Fdd2; a ¼1.2431, b¼2.3806, c ¼0.7135 nm) [13]. The crystals of AgGaGeS 4 and of the g-phase selenide were obtained by many authors and their properties were extensively reported [10][11][12][13][14][15][16][17][18][19][20][21][22]. As AgGaGeS 4 and AgGaGe 3 Se 8 are isostructural with minor differences in the ionic radii of the interchangeable elements (for a case of isovalent substitution), one can expect the formation of considerable solid solution ranges between these two compounds.…”

Section: Introductionmentioning

confidence: 99%