Single crystal growth of one-dimensional GaN nanostructures by halide vapor-phase epitaxy

Abstract

High-quality one-dimensional GaN rods and nanowires were grown on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffractometery, scanning and transmission electron microscopy, and photoluminescence techniques. A high density of straight and aligned one-dimensional GaN nanowires with a diameter of 80 nm was uniformly formed on the entire substrate at 700 • C. The X-ray diffraction patterns, transmission electron microscopic images, and selective area electron diffraction patterns indicate that the one-dimensional GaN are nanostructure pure single crystals preferentially oriented in the [001] direction. Photoluminescence analysis revealed that the HVPE grown GaN nanowires have high optical quality.

Geometry and diameter dependence of the electronic and physical properties of GaN nanowires from first principles

“…6 Experimental studies producing GaN nanowires typically generate them with the wurtzite structure, [6][7][8][9][10][11][12] although they have also been reported in the zinc blende structure.…”

“…There are also a number of different growth directions reported, including the [0001], 6,[10][11][12] [1010] 14,15 and [1120] 12,15 directions. Recently GaN nanowires with internal p-n junctions have been fabricated through Mg incorporation.…”

Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

“…Their nanowires have been attracting interest for a wide range of optical and electronic applications, such as UV lasers, field effect transistors and logic gates [4][5][6] . Nanowires can be grown by various methods, including chemical vapor deposition (CVD), metalorganic CVD and vapor phase epitaxy using Au, Ni, Co or Si as catalysts for vapor-liquid-solid (VLS) growth [7][8][9][10] . Nanotubes and nanobelts of GaN have been also prepared by nitridation of -Ga 2 O 3 by NH 3 11,12 .…”

The Growth of One‐Dimensional Single‐Crystalline AlN Nanostructures by HVPE and Their Field Emission Properties

“…We have previously reported the growth of 1-D GaN, [21] InN, [22] and doped GaN [23] nanowires using this system. In our process, the transportation of the Al resource is carried out through reaction with HCl gas, followed by the production of AlN nanostructures with NH 3 according to the following reaction scheme, Reactions 1 and 2.…”

“…Furthermore it may be more likely that the Al atom accommodates preferentially on the [1120] plane in order to decrease the compressive stress of the core of 1-D nanostructures which increases with deposition rate on the substrate. [21] The carrier gas flow rate may also be affected on decreasing the growth rate owing to the drop in the reactant gases concentration. Although there are many complex process conditions for the growth of 1-D AlN nanorods, we suggest that the carrier gas flow rate should be a significant process parameter to control the diameter.…”