2008
DOI: 10.1002/adma.200701569
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Single‐Crystal Semiconductor Wires Integrated into Microstructured Optical Fibers

Abstract: Single‐crystal silicon wires are grown within the pores of microstructured optical fibers via a high‐pressure fluid‐liquid‐solid approach. Precise spatial organization of single crystal semiconductor wires offers a flexible alternative approach to the self‐assembly or lithographic techniques often used for patterning wires for electronics and photonics. This will enable new composite materials that allow for cooperative photonic and electronic phenomena.

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Cited by 39 publications
(30 citation statements)
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“…Examples include: two-step drawing of submicrometer-diameter silica wires [43], holey fibers as template [44], [45], and post-processing by filling the holes of air-silica microstructured optical fiber [46]. A two-step drawing process was introduced to further reducing the diameter of silica wire from micrometers down to tens of nanometers [43].…”
Section: Discussionmentioning
confidence: 99%
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“…Examples include: two-step drawing of submicrometer-diameter silica wires [43], holey fibers as template [44], [45], and post-processing by filling the holes of air-silica microstructured optical fiber [46]. A two-step drawing process was introduced to further reducing the diameter of silica wire from micrometers down to tens of nanometers [43].…”
Section: Discussionmentioning
confidence: 99%
“…As seen in figure 5-la, one end of a micrometer-scale silica wire was then placed horizontally on the sapphire tip, heated to high temperature (about 2, 000 K), and winded the wire around the tip by rotating the sapphire tip, resulting in the submicrometer or nanometer-diameter silica wires. A tapered sapphire fiber ( figure 5-1b Another method is using hollow core of fiber as a template to growth nanowires [44], [45], as seen in figure 5-1d. Generally, deposition within micro to nanoscale diameter chamber is difficult due to the larger aspect ratio, and high pressure is necessary to overcome the mass-transport constraints inside the micron sized holes.…”
Section: Discussionmentioning
confidence: 99%
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“…[ 60 ] The various gaseous ingredients needed for the process are inserted via high external pressure (of the order of several hundreds of bars), and the actual chemical reactions are either thermally stimulated or externally triggered via photoexcitation (e.g., by side focusing laser light onto the capillary). [ 61 ] The deposition process starts at the side walls of the bore, with the fi nal fi lm thickness being determined by the deposition time up to the point when the bore is completely fi lled. This technique was shown to be capable of producing semiconductor wires with diameters of the order of several micrometers down to hundreds of nanometers of various materials of extremely good optical and electrical quality.…”
Section: Modifi Ed Chemical Vapor Depositionmentioning
confidence: 99%
“…The drawing process, however, has until now been limited to materials that flow at the draw temperature. Approaches that attempt to circumvent this limitation include depositing materials inside (4)(5)(6)(7) or onto the surface (8)(9)(10)(11) of previously drawn fiber substrates. These methods do not take full advantage of the scaling associated with fiber drawing and are limited in their geometric complexity and the length over which uniform structures can be produced.…”
mentioning
confidence: 99%