Single-crystalline 4H-SiC micro cantilevers with a high quality factor

Adachi, Keita; Watanabe, Naoki; Okamoto, Hajime; Yamaguchi, Hiroshi; Kimoto, Tsunenobu; Suda, Jun

doi:10.1016/j.sna.2013.04.014

Cited by 23 publications

(23 citation statements)

References 17 publications

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“…SiC bulk etching techniques have been developed Figure 7. (a) 3C-SiC resonator structure [83] and (b) 4H-SiC micro cantilever [84] seeking high throughput to realize patterned, high-aspect ratio features, such as preservation of sidewall smoothness and etching profile at high etch rates, and high selectivity. In parallel, the progresses on the growth of 3C-SiC on silicon substrates and in surface micromachining techniques have enabled the fabrication of interesting MEMS devices.…”

Section: Discussionmentioning

confidence: 99%

“…Adachi et al compared the resonance characteristics of 4H-SiC cantilevers on 4H-SiC substrate with the same dimensions of 3C-SiC cantilevers fabricated on Si substrate. It was observed that the resonant frequency of the 4H-SiC cantilevers was 10 times that of 3C-SiC cantilevers [84]. The 4H-SiC cantilevers were fabricated by doping-type selective electrochemical etching of 4H-SiC and their structure is shown in Figure 7(b).…”

Section: A Brief Overview Of the Most Common Sic Microsystem Devicesmentioning

confidence: 99%

See 1 more Smart Citation

Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material

Fraga¹,

Bosi²,

Negri³

2015

Advanced Silicon Carbide Devices and Processing

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Section: Discussionmentioning

confidence: 99%

Section: A Brief Overview Of the Most Common Sic Microsystem Devicesmentioning

confidence: 99%

Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material

Fraga¹,

Bosi²,

Negri³

2015

Advanced Silicon Carbide Devices and Processing

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“…c. Silicon carbide vacancy defects In addition to NV centres, divacancy defects of certain silicon carbide (SiC) polytypes exhibit optically addressable spin states suitable for qubit operations [47]. Furthermore, SiC micro electromechanical devices [48] and the required fabrication techniques have evolved in recent years, which could open up the possibility of a material with both optical qubit read-out and scalable fabrication techniques. Some important aspects of qubit operation, however, such as longer decoherence times (1.2 ms reported in [49]), single shot qubit read-out and deterministic defect creation with high positional accuracy have yet to be demonstrated.…”

Section: Materials Systemsmentioning

confidence: 99%

A silicon-based surface code quantum computer

O'Gorman,

Nickerson,

Ross

et al. 2014

Preprint

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Individual impurity atoms in silicon can make superb individual qubits, but it remains an immense challenge to build a multi-qubit processor: There is a basic conflict between nanometre separation desired for qubit-qubit interactions, and the much larger scales that would enable control and addressing in a manufacturable and fault tolerant architecture. Here we resolve this conflict by establishing the feasibility of surface code quantum computing using solid state spins, or 'data qubits', that are widely separated from one another. We employ a second set of 'probe' spins which are mechanically separate from the data qubits and move in-and-out of their proximity. The spin dipole-dipole interactions give rise to phase shifts; measuring a probe's total phase reveals the collective parity of the data qubits along the probe's path. We introduce a protocol to balance the systematic errors due to the spins being imperfectly located during device fabrication. Detailed simulations show that the surface code's threshold then corresponds to misalignments that are substantial on the scale of the array, indicating that it is very robust. We conclude that this simple 'orbital probe' architecture overcomes many of the difficulties facing solid state quantum computing, while minimising the complexity and offering qubit densities that are several orders of magnitude greater than other systems.The code written for our numerical simulations is openly available online [1].

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“…11 Previously, non-polymeric materials such as silicon nitride, silicon carbide, silicon dioxide and metals were very often used for fabrication of cantilevers. 12–15 The overall fabrication process in case of polymeric cantilevers is substantially simplified, thus changing gears from a conventionally carried out multi-mask complex process to much easier single masking step.…”

Section: Introductionmentioning

confidence: 99%

Geometry and thickness dependant anomalous mechanical behavior of fabricated SU-8 thin film micro-cantilevers

Basu

Basak

Bhattacharya

2020

Journal of Micromanufacturing

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SU-8 micro-cantilever arrays consisting of V- and M-shaped structures fabricated using a simplified single hard mask step. Bending tests were performed under similar peak loads (ranging 2–10 µN), with thickness ranging between micron (3.5 µm) and sub-micron (0.2 µm) scales. Various mechanical properties such as stiffness and hysteresis are determined from the load versus deflection curves. When the thickness of the V-shaped beam is decreased from 2 µm to 0.2 µm, the stiffness increases by a factor of 2.7, which is in contradiction with the classical beam theory according to which the stiffness for 0.2 µm beam should be three orders of magnitude less than that of 2 µm beam. Micropolar elasticity theory with a variable-intrinsic length scale (thickness dependant) is used to explain such an anomalous response. Experimentally obtained stiffness of two M-shaped beams of thickness 2 µm and 0.2 µm are almost identical. Reason behind this contradictory result is that the thicker beam has a residual strain with a large plastic deformation which usually increases the cross-linking network density, leading to increase in elastic modulus, hardness and thus stiffness of polymers. But the thinner beam has undergone an elastic deformation. The size effect of V- and M-shaped cantilever beams is discussed.

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Single-crystalline 4H-SiC micro cantilevers with a high quality factor

Cited by 23 publications

References 17 publications

Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material

Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material

A silicon-based surface code quantum computer

Geometry and thickness dependant anomalous mechanical behavior of fabricated SU-8 thin film micro-cantilevers

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