Bulk single crystals of multicomponent
garnet scintillators Lu3–x
Gd
x
Ga
y
Al5–y
O12:Ce exhibit much improved
scintillation properties
in optimized composition islands (x = 2–3, y = 2–3) compared to the simple Lu3Al5O12:Ce one. Namely, a much higher light yield,
less intense slow component in the scintillation response, and better
energy resolution have been achieved. This work shows that comparable
enhancement of the scintillation performance can be reached also in
the case of epitaxial garnet films of similar composition though the
nature of trapping states acting in the transfer stage of the scintillation
mechanism may be different. This is the first time that excellent
scintillation properties were reproduced in epitaxial films. Lu3–x
Gd
x
Ga
y
Al5–y
O12:Ce samples were grown by liquid phase epitaxy from BaO-B2O3–BaF2 flux and quantitatively
compared with top performance bulk crystals as concerns light yield,
energy resolution, scintillation decay, and afterglow characteristics.
Reported characteristics point to the potential of such thin film
scintillators in high resolution two-dimensional imaging and particle
beam diagnostics.