Single-crystalline GePb alloys formed by rapid thermal annealing-induced epitaxy

Abstract

Single-crystalline GePb alloys have been successfully achieved by implanting Pb into Ge, followed by rapid thermal annealing under N 2 atmosphere. The high crystallinity and the thickness of around 20 nm of the GePb alloys was determined by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. The root-mean-square value of the as-implanted GePb sample is evaluated to be 1.25 nm in the 5 × 5 um scan area, which indicates a rather smooth surface. After being annealed at 400 • C, the result of a selected area electron diffraction pattern suggested that a single-crystalline alloy film was formed for the first time. The Pb composition of this sample is approximately 0.23% according to the x-ray photoelectron spectroscopy results. This value corresponds with the measurement result of the secondary ion mass spectroscopy. In addition, mobility enhancement in GePb/Ge samples has been identified by temperature-dependent Hall measurement, which indicates GePb alloys have great potential to be a promising high-mobility channel material for future monolithic optoelectronics integration application.

Corrosion‐Responsive Self‐Healing Coatings

“…Near‐infrared light is suitable in coatings because many organic materials display less absorption of light at these wavelengths and less scattering, so that the light can penetrate deeper in the coating's matrix. The generated thermal energy is then used for triggering a epoxide‐amine reaction, [ 68 ] a Diels–Alder reaction, [ 69,70 ] activation of disulfide bond exchange reaction in the matrix, [ 71 ] transesterification reactions, [ 72 ] or to reach a temperature higher than the melt temperature of the matrix [ 73–75 ] or microcapsules containing a water‐repelling molecule, [ 76 ] enhance chain mobility above the glass transition temperature of the matrix, [ 77 ] enhance the release of encapsulated corrosion inhibitors, [ 78,79 ] or trigger a shape memory effect in a polymer matrix. [ 78–84 ] Carbon nanotubes, [ 68,72 ] carbon nanoparticles, [ 76 ] graphene‐based nanosheets, [ 82 ] reduced graphene oxide at mesoporous silica particles, [ 79 ] MXene‐based materials, [ 69,80 ] polypyrrole, [ 73 ] polydopamine‐based nanoparticles, [ 71,81,83 ] titanium nitride nanoparticles, [ 74,78 ] cerium oxide nanoparticles, [ 70 ] cuprous oxide nanoparticles, [ 77 ] iron oxide nanoparticles, [ 84 ] metal–organic frameworks.…”

“…[ 78–84 ] Carbon nanotubes, [ 68,72 ] carbon nanoparticles, [ 76 ] graphene‐based nanosheets, [ 82 ] reduced graphene oxide at mesoporous silica particles, [ 79 ] MXene‐based materials, [ 69,80 ] polypyrrole, [ 73 ] polydopamine‐based nanoparticles, [ 71,81,83 ] titanium nitride nanoparticles, [ 74,78 ] cerium oxide nanoparticles, [ 70 ] cuprous oxide nanoparticles, [ 77 ] iron oxide nanoparticles, [ 84 ] metal–organic frameworks. [ 75 ] The advantage of healing of coatings by the photothermal effect has the advantage of being very fast, with most of the studies reporting a healing under 2 min. Drawbacks include a chemical and physical degradation of the matrix material at higher temperatures.…”

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

“…Emerging group IV material systems, such as GeSnSi alloys [ 149 ], GeSnSiC alloys [ 150 , 151 ], GePb alloys [ 152 , 153 , 154 ], and GeSnPb alloys [ 155 ], are also promising SWIR absorbers towards high-performance APDs. Especially for the GeSnSiC alloys, Ge 1−x−y−z Sn x Si y C z films (0.01 ≤ x ≤ 0.06, 0 ≤ y ≤ 0.02 and 0 ≤ z ≤ 0.01) had been successfully grown at 280–330 °C on Ge and Si using commercial RPCVD technique, indicating it has the great potential to be commercialized.…”

The effect of isovalent doping on the electronic band structure of group IV semiconductors

“…Among group IV alloys such conditions may be present in many systems but the electronic band structure has not been extensively analyzed. Just a handful of published theoretical and experimental papers only for selected systems [27][28][29][30][31][32][33][34][35][36][37][38][39] and no cross-sectional work can be found for such alloys. A systematic study and comparison of the group IV alloys would provide a valuable insight into the chemical trends, which this paper aims to provide and which have not been studied previously.…”