Single‐Crystalline In<sub>2</sub>O<sub>3</sub> Nanotubes Filled with In

Li, Yubao; Bando, Yoshio; Golberg, Dmitri

doi:10.1002/adma.200304539

Cited by 233 publications

(165 citation statements)

References 16 publications

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“…A similar phenomenon, associated with the encapsulated In in In 2 O 3 nanotubes under electron irradiation, has been observed. [22] In the present case, the temperature in the vicinity of a junction area increases, Ga entirely melts upon irradiation (bulk Ga has a melting point of 29.8 C, although it may also remain liquid at lower temperatures, when confined within a nanotube shape [20b] ) and thermally expands at a very low basic pressure (~1 10 ±5 Pa) in the TEM chamber. This favors the movement and/or partial evaporation of the Ga part within a silica nanotube; when the beam is removed from the junction area.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of Silica‐Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions

Bandô

Zhan

et al. 2005

Advanced Materials

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Ga–ZnS nanowire heterojunctions, uniformly sheathed with very thin silica nanotubes, are prepared via thermal evaporation of SiO, Ga2O3, and ZnS powder precursors followed by thermochemical reaction. Some nanowires have a single junction (Figure, top), while others have multiple junctions (bottom). The Ga–ZnS interface is particularly sensitive to electron‐beam irradiation (EBI), making possible an EBI‐driven switch.

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Section: Methodsmentioning

confidence: 99%

Fabrication of Silica‐Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions

Bandô

Zhan

et al. 2005

Advanced Materials

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“…The few such NIR OLEDs reported to date have been based on low-bandgap polymers, [9] or polymer±small molecule blends that exploit p-conjugated dyes, [10] or rare-earth-ion [7,8] dopants. Energy gap law effects, [11] as well as the spin-and LaPorte-forbidden nature of the pertinent lanthanide f-manifold transitions, diminish the external electroluminescence (EL) quantum efficiencies of these LEDs (< 0.4 % photons per electron) with respect to analogous devices that emit light in the visible; furthermore, NIR LEDs based on polymer±small molecule blend strategies often suffer from inadequate dopant spectral overlap with the emission band of an optimal host polymer, or limitations that derive from modest number of emission frequencies (e.g., 1540, 1320, 1064, and 977 nm) supported by rare-earth chelates.…”

Section: Methodsmentioning

confidence: 99%

Near‐Infrared Electroluminescent Light‐Emitting Devices Based on Ethyne‐Bridged Porphyrin Fluorophores

et al. 2003

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For the emitters following the Fowler±Nordheim (FN) theory, the plot of ln(J/E 2 ) versus E ±1 gives a straight line and its slope, ± (Bu 3/2 /b), determines the FN enhancement factor b, where E is the applied field, u is the work function, and B is a constant. The inset in Figure 5 displays the corresponding FN plot at a separation of 150 lm, showing a linear relationship and revealing that electron emission from the tips of the nanowires follows FN behavior. Here, we define the turn-on field and the threshold field as the electric fields required to produce a current of 10 lA cm ±2 and 10 mA cm ±2, respectively. The results demonstrate that the prepared W 18 O 49 nanowires had a turnon field of 2.6 ± 0.1 V lm ±1 and a threshold field of 6.2 V lm ±1 .The threshold field of W 18 O 49 nanowires is close to that reported for open-ended C nanotubes (~5 V lm ±1 ) [3] and lower than that of needle-shaped SiC nanorods (~8.5 V lm ±1) or MoS 2 nanoflowers (7.6±8.6 V lm ±1 ), [19,20] indicating that the prepared W 18 O 49 nanowires are excellent field emitters. In summary, quasi-aligned single-crystalline W 18 O 49 nanotubes or nanowires were successfully prepared under different atmosphere pressures. The diameters of the nanotubes were 150±350 nm, while those of the nanowires were in the range of 20±100 nm. A deficiency in vapor supply plays an essential role in the nucleation of tubular nanostructures. Field-emission measurements showed a threshold of 6.2 V lm ±1 for the W 18 O 49 nanowire films, indicating that they are excellent field emitters. The prepared tungsten oxide nanotubes or nanowires have a great potential for photochromic or electrochromic applications. ExperimentalThe experiments were conducted in an infrared irradiation±heating furnace connected to a high-vacuum system. Tungsten foils (15 mm 15 mm 0.1 mm) were used as heating targets. A Ta wafer (10 mm 10 mm) was laid under the W foil at a 3 mm distance and used as substrate. The W foils were heated to 1000±1050 C, while the temperature of the Ta substrate was about 650 C. Heating continued for 1 h. In the synthesis of the nanotubes, the chamber air pressure was maintained at 0.2 torr for the first 20 min, and then increased to 10 torr for the remaining 40 min. In the synthesis of nanowires, the air pressure in the chamber was kept at 10 torr for the whole process. When the chamber cooled to room temperature, the upper surface of the Ta substrates was entirely covered with a dark blue film. A field-emission SEM (JSM-6700F) was used to observe the morphology of the products. XRD spectra of the prepared nanostructures were recorded on a RINT2200 X-ray diffractometer using standard Cu Ka radiation. Further structural characterization was performed on a highresolution TEM (JEM-3000F) at 300 kV. The chemical composition of the nanostructures was detected using an EDS apparatus attached to a TEM.

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13] Much effort has been made in the past decade toward the study of carbon nanotubes with layered structures. 1,2 Recently, processing of inorganic nanotubes with nonlayered structures received significant interest.…”

Section: Introductionmentioning

confidence: 99%

“…5 Li et al reported the synthesis of In 2 O 3 nanotubes following a liquid metal assisted route. 6 In some cases, nanowires were used as templates for the synthesis of single crystalline inorganic nanotubes. Yang and co-workers synthesized single crystalline GaN nanotubes using ZnO nanowires as templates.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Single Crystalline Tellurium Nanotubes with Triangular and Hexagonal Cross Sections

et al. 2005

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Single crystalline tellurium (Te) nanotubes with triangular cross sections were successfully synthesized for the first time by a simple approach of vaporizing tellurium metal and condensing the vapor in an inert atmosphere onto a suitable substrate. Tellurium gas was evaporated by heating at 350°C and was condensed on the Si (100) substrate at 150-200°C, in the downstream of argon (Ar) gas at a flow rate of 25 sccm for 10 min. This led to the production of nanotubes of triangular cross section along with some hexagonal ones. The formation of the nanotubes was highly dependent upon the structure of the substrate surface, Ar gas flow rate, and the deposition temperature. When the substrate is Si (111) or sapphire (0001) or when the argon flow rate is increased to 500 sccm, nanowires and nanorods were exclusively formed. Irrespective of the morphologies, all the observed Te nanostructures grew in a regular [0001] direction. The facile approach to nanotubes with a triangular cross section may facilitate some new applications as well as stimulate theoretical studies pertaining to the stability of this high-energy configuration.

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Single‐Crystalline In₂O₃ Nanotubes Filled with In

Cited by 233 publications

References 16 publications

Fabrication of Silica‐Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions

Fabrication of Silica‐Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions

Near‐Infrared Electroluminescent Light‐Emitting Devices Based on Ethyne‐Bridged Porphyrin Fluorophores

Synthesis of Single Crystalline Tellurium Nanotubes with Triangular and Hexagonal Cross Sections

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Single‐Crystalline In2O3 Nanotubes Filled with In

Cited by 233 publications

References 16 publications

Fabrication of Silica‐Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions

Fabrication of Silica‐Shielded Ga–ZnS Metal–Semiconductor Nanowire Heterojunctions

Near‐Infrared Electroluminescent Light‐Emitting Devices Based on Ethyne‐Bridged Porphyrin Fluorophores

Synthesis of Single Crystalline Tellurium Nanotubes with Triangular and Hexagonal Cross Sections

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Single‐Crystalline In₂O₃ Nanotubes Filled with In