Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process

Yamaguchi, Tomohiro; Mizuo, K.; Saito, Y.; Noguchi, Takuma; Araki, Tsutomu; Nanishi, Yasushi; Miyajima, Takao; Kudo, Yoshihisa

doi:10.1557/proc-743-l3.26

MRS Proc.

2002

DOI: 10.1557/proc-743-l3.26

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Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process

Tomohiro Yamaguchi

K. Mizuo

Y. Saito

et al.

Abstract: InN films were grown on Si (111) substrates by radio-frequency plasma-excited molecular beam epitaxy. InN films highly oriented to the c-axis were obtained by optimizing growth conditions in the direct growth on Si. Growth of single crystalline InN films was realized on Si substrates with substrate nitridation for 3 min. On the other hands, when the substrate nitridation was lasted over 30 min, obtained InN films were polycrystalline due to the amorphous SiNx layer formed on a substrate surface. We also studie… Show more

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Cited by 8 publications

(17 citation statements)

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“…The reported value of the full width at half maximum (FWHM) of the X-ray rocking curve (XRC) has been 1.3 degrees [9] up to now. Recently, single-crystalline InN films were realized by using a brief substrate nitridation [7,10]. The XRC-FWHM of the films, however, was still more than 1 degree.…”

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confidence: 99%

“…The sub-strates were then thermally cleaned at over 800 °C for 20 min in the growth chamber. This produced a sharp 7×7-reconstruction RHEED pattern typical of clean Si(111) surfaces [10]. Single-crystalline InN films have been realized by 3-min substrate nitridation at a high temperature of approximately 800 °C [10].…”

mentioning

confidence: 99%

“…This produced a sharp 7×7-reconstruction RHEED pattern typical of clean Si(111) surfaces [10]. Single-crystalline InN films have been realized by 3-min substrate nitridation at a high temperature of approximately 800 °C [10]. AlN buffer layers were inserted at approximately 800 °C on the nitridated substrates.…”

mentioning

confidence: 99%

“…AlN buffer layers were inserted at approximately 800 °C on the nitridated substrates. Then, lowtemperature InN buffer layers were deposited at 300 °C to obtain a smooth InN surface [10,11]. Finally, InN epitaxial films were grown at approximately 400 °C.…”

mentioning

confidence: 99%

“…Nevertheless, recently, single-crystalline InN films were realized on Si by using substrate nitridation [7,10]. In suppressing the amorphous-like SiN x layer, the nitridation time was very important.…”

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confidence: 99%

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Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

Yamaguchi

Saito

Morioka

et al. 2003

Physica Status Solidi (b)

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InN films were grown on Si(111) substrates by RF-MBE, and an AlN buffer layer was inserted between Si substrates and a low-temperature InN buffer layer. The AlN buffer layer suppressed the formation of amorphous-like SiN x layer on the Si substrate surface, which led to the improvement of the crystallinity of the low-temperature InN buffer layer. High-quality InN films could then be realized on the lowtemperature InN buffer layer with the AlN buffer layer inserted. The best value of the XRC-FWHM was 31.3 arcmin for InN films with a thickness of 300 nm. In addition, a surface reconstruction of InN was observed for the first time.1 Introduction InN is a very attractive material for future optical and electronic devices. Recently, the growth of high-quality InN films has been reported, and the true band-gap energy of InN is considered to be 0.7-0.8 eV [1][2][3][4], which is much smaller than the previously reported value of approximately 1.9 eV [5,6]. This means that the application field of nitride semiconductors can be extended to the optical communication wavelength. The nitride semiconductors also have great potential for use in a new highefficiency tandem solar cell which can mostly cover the solar spectrum and uses only the harmless nitride semiconductors.High-quality InN films have conventionally been grown on sapphire substrates. Si is a more fascinating substrate material because it has several advantages over sapphire [7]. To date, the quality of InN epitaxial films on Si substrates has been much poorer than that on sapphire substrates, because InN films easily become polycrystalline due to the silicon nitride of amorphous phase which forms on the Si substrate surface [8]. The reported value of the full width at half maximum (FWHM) of the X-ray rocking curve (XRC) has been 1.3 degrees [9] up to now. Recently, single-crystalline InN films were realized by using a brief substrate nitridation [7,10]. The XRC-FWHM of the films, however, was still more than 1 degree. Improvement of the film quality is strongly required in various application fields.In this study, InN films have been grown on Si substrates with the insertion of an AlN buffer layer. High-quality InN films with the XRC-FWHM of approximately 30 arcmin were realized. In addition, a surface reconstruction of InN was observed for the first time by means of reflection high-energy electron diffraction (RHEED).

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confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

Yamaguchi

Saito

Morioka

et al. 2003

Physica Status Solidi (b)

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Recent development of InN RF‐MBE growth and its structural and property characterization

Nanishi

Saito

Yamaguchi

et al. 2004

phys. stat. sol. (c)

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Effect of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by RF‐MBE

Shike

Shigemori

Tanaka

et al. 2004

phys. stat. sol. (c)

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The effects of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by plasma assisted molecular beam epitaxy were investigated. When 10 seconds of nitridation was applied on AlGaAs buffer layer, the surface became very smooth by the suppression of {111} facet formation. The reproducibility and stability of high purity cubic GaN epilayer growth was dramatically improved by reducing the nitridation time. Dominant cubic GaN epilayer (0.8 µm) growth was confirmed by in situ RHEED observation, AFM, PL and X-ray diffraction measurements. 1 Introduction Cubic GaN (c-GaN) is expected to have many advantages in physical properties over those of the hexagonal phase due to its higher crystallographic symmetry. If high quality c-GaN thick film growth is realized, better performance of devices such as light emitting diodes (LEDs) and laser diodes (LDs) will be achievable. We earlier reported that using AlGaN layer formed by nitridation of an Al 0.17 Ga 0.83 As buffer layer was an efficient process for ensuring highly pure c-GaN growth [1]. But there still remain some problems regarding AlGaN nucleation layer growth. The first relates to fluctuations in Al concentration, which in turn significantly affects the purity of the structural phase of the epilayer. The seconds is the difficultly of maintaining high quality stoichiometric growth for extend periods of time due to the need for careful control of the beam fluxes (Al, Ga and As) required. Moreover, in the process of carrying out high quality c-GaN epilayer growth, a small amount of hexagonal GaN (h-GaN) was found to easily grow due to the formation of {111} facets during the nitridation process. Recently, improvements in the crystallinity of nitride crystal growth for short nitridation times have been studied [2,3]. The nitridation process of the initial growth of c-GaN films on GaAs substrate has also been studied [4][5][6].In this work, a dramatic improvement in the reproducibility and stability of c-GaN epilayer growth was achieved by controlling {111} facet formation during the initial stage of growth by optimizing nitridation conditions. The crystallographic properties of the as-grown layers were characterized by reflection high-energy electron diffraction (RHEED) and high resolution X-ray diffraction (HR-XRD). Atomic force microscopy (AFM) and low temperature photoluminescence (PL) measurements were carried out in order to characterize the surface morphology and optical properties, respectively.

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Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process

Cited by 8 publications

References 17 publications

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

Recent development of InN RF‐MBE growth and its structural and property characterization

Effect of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by RF‐MBE

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