Single crystalline SnO₂ thin films grown on m ‐plane sapphire substrate by mist chemical vapor deposition

Abstract

Tin dioxide (SnO2) thin films, as a candidate for realizing next‐generation electrical and optical devices, were grown on 2‐inch diameter m ‐plane sapphire substrates by mist chemical vapour deposition at atmospheric pressure. The SnO2 thin films were characterized by scanning electron microscope (SEM), atomic force microscope (AFM), X‐ray diffraction (XRD) in θ–2θ and φ scanning modes, and electron backscatter diffraction (EBSD). Although the SEM and AFM images showed a relatively rough surface morphology, it was found from the XRD and EBSD measurements that SnO2 films were epitaxially grown on the substrates under optimised growth condition. Epitaxial growth of SnO2 thin film growth at three typical areas on the substrate was confirmed by the EBSD measurements. It is likely that the single crystalline SnO2 (001) thin film was formed across the 2‐inch sapphire substrate. Finally, the second SnO2 layer was overgrown on the above single crystalline SnO2 thin film, which functioned as a buffer layer. This method which drastically improved surface roughness of the second SnO2 layer.

Persistent Photoconductivity Control in Zn-Doped SnO2 Thin Films for the Performance Enhancement of Solar-Blind Ultraviolet Photodetectors

“…This would be due to the strain effect of the SnO 2 thin film grown on a sapphire substrate. The SnO 2 can be grown epitaxially on the sapphire substrate. ,, In addition, as shown in Figure g, the XRD shows that the SnO 2 thin films grow preferentially along the (111) plane on the c -plane sapphire substrate. This indicates that the SnO 2 thin films are grown epitaxially on the sapphire films so that the strain effect would induce the modification of the band gap energy.…”

Strain-Induced Modulation of Resistive Switching Temperature in Epitaxial VO2 Thin Films on Flexible Synthetic Mica

“…SnO 2 has previously been utilized as a buffer layer for the epitaxial growth of VO 2 . The epitaxial growth of highly crystalline SnO 2 thin films on sapphire substrates via mist CVD has also been reported. , Hence, to grow epitaxial VO 2 thin films, we proposed to utilize SnO 2 buffer layers on synthetic mica. In this study, VO 2 thin films were grown on synthetic mica with and without SnO 2 buffer layers by mist CVD, and their electrical properties and MIT behavior were subsequently investigated.…”

High-Performance Zinc Tin Oxide Semiconductor Grown by Atmospheric-Pressure Mist-CVD and the Associated Thin-Film Transistor Properties

“…On the other hand, spin-coating processes involve repetitive procedures to control the resulting layer’s thickness. Compared to previous solution processes, mist-CVD allows relatively convenient thickness modulation and involve the application of environment-friendly solvents, such as water and acetone. , Recently, quite a few studies based on oxide films such as InO x , SnO x , and ZnO x deposited via mist-CVD have been reported. − The films synthesized by the two methods are comparatively examined using X-ray diffraction (XRD), transmission electron microscopy (TEM), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and X-ray absorption near-edge structure (XANES) analyses. TFTs based on the two types of ZTO semiconductors are evaluated, and the mist-CVD ZTO devices are found to exhibit superior electrical performance.…”